Substrate with conductive film, substrate with multilayer reflective film and reflective mask blank for EUV lithography
View Patent ↗To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
1. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate;
wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and
the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
2. The substrate with a conductive film according to claim 1 , wherein in the lower layer of the conductive film, the total content of Cr and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.
3. The substrate with a conductive film according to claim 2 , wherein the compositional ratio (atomic ratio) of Cr to O in the lower layer of the conductive film is Cr:O=9:1 to 3:7.
4. The substrate with a conductive film according to claim 1 , wherein in the upper layer of the conductive film, the total content of Cr and N is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.
5. The substrate with a conductive film according to claim 4 , wherein the compositional ratio (atomic ratio) of Cr to N in the upper layer of the conductive film is Cr:N=9.5:0.5 to 3:7.
6. The substrate with a conductive film according to claim 1 , wherein the film thickness of the lower layer of the conductive film is from 1 to 30 nm.
7. The substrate with a conductive film according to claim 1 , wherein the film thickness of the upper layer of the conductive film is from 50 to 300 nm.
8. The substrate with a conductive film according to claim 1 , wherein the sheet resistance of the conductive film is at most 20Ω/□.
9. The substrate with a conductive film according to claim 1 , wherein the conductive film has a compressive stress of from 300 MPa to 900 MPa.
10. The substrate with a conductive film according to claim 1 , wherein the lower layer of the conductive film is in an amorphous state.
11. The substrate with a conductive film according to claim 1 , wherein the upper layer of the conductive film is in an amorphous state.
12. The substrate with a conductive film according to claim 1 , wherein the surface roughness (rms) of the conductive film is at most 0.5 nm.
13. The substrate with a conductive film according claim 1 , wherein the lower layer of the conductive film is formed by a sputtering method using a Cr target in an atmosphere containing an inert gas including at least one member selected from the group consisting of helium (He), argon (Ar), neon (Ne), krypton (Kr) and xenon (Xe), and oxygen (O 2 ) and hydrogen (H 2 ), at an atmospheric temperature during sputtering of from 60 to 120° C.
14. The substrate with a conductive film according to claim 1 , wherein the upper layer of the conductive film is formed by a sputtering method using a Cr target in an atmosphere containing an inert gas including at least one member selected from the group consisting of helium (He), argon (Ar), neon (Ne), krypton (Kr) and xenon (Xe), and nitrogen (N 2 ) and hydrogen (H 2 ), at an atmospheric temperature during sputtering of from 60 to 120° C.
15. A substrate with a multilayer reflective film for a reflective mask blank for EUV lithography, which is the substrate with a conductive film as defined in claim 1 , further comprising a multilayer reflective film formed on a surface of the substrate opposite from a surface on which the conductive film is formed.
16. The substrate with a multilayer reflective film according to claim 15 , wherein the warpage of the substrate is at most 0.8 μm.
17. A reflective mask blank for EUV lithography, which is the substrate with a multilayer reflective film as defined in claim 15 , further comprising an absorber layer formed on the multilayer reflective film.
18. The reflective mask blank for EUV lithography according to claim 17 , which is the substrate with a multilayer reflective film further comprising an absorber layer formed on the multilayer reflective film, wherein the warpage of the substrate is at most 0.8 μm.
19. A reflective mask for EUV lithography produced by patterning the reflective mask blank for EUV lithography as defined in claim 17 .