IP Library Granted Patent US 9,229,281
Granted Patent B2
US 9,229,281 · App. 13/957,328 · Granted Jan 5, 2016

TFT array substrate and forming method thereof, and display panel

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Quick Facts
Patent No.
US 9,229,281
App. No.
13/957,328
Granted
Jan 5, 2016
Kind
B2
Abstract

A TFT array substrate is disclosed. The TFT array substrate includes an array of TFT switches including scan lines, data lines intersecting the scan lines, and TFT switches. Each of the TFT switches includes a gate electrode electrically connected to a scan line, a source electrode electrically connected to a data line, and a drain electrode. The TFT array substrate also includes an array of pixel electrodes, each of the pixel electrodes is electrically connected to the drain electrode of a corresponding TFT switch. At least one first pixel electrode is disposed in the array of the pixel electrodes, and each first pixel electrode has an overlapping portion overlapped by at least one of the scan lines and the data lines. In addition, in the overlapping portion, a shielding electrode layer is located between the first pixel electrode and at least one of the scan line and the data line overlapping the first pixel electrode.

Claims (68)

1. A Thin-Film Transistor (TFT) array substrate, comprising:

a substrate;

an array of TFT switches disposed on the substrate, the array of TFT switches comprising:

a plurality of scan lines,

a plurality of data lines intersecting with the plurality of scan lines, and

a plurality of TFT switches, wherein each of the TFT switches comprises a gate electrode electrically connected to a scan line, a source electrode electrically connected to a data line, and a drain electrode;

an array of pixel electrodes disposed on the substrate, wherein each of the pixel electrodes is electrically connected to the drain electrode of a corresponding TFT switch, wherein:

a first pixel electrode in the array of the pixel electrodes has an overlapping portion overlapped by at least one of the scan lines and the data lines, and wherein in the overlapping portion, a shielding electrode layer is located between the first pixel electrode and at least one of the scan line and the data line overlapping the first pixel electrode,

a second pixel electrode in the array of pixel electrodes and the drain electrode of the corresponding TFT switch are in a same layer and are electrically connected,

a common electrode layer, operatively applied with a common electric potential, is disposed between the substrate and the second pixel electrode,

the shielding electrode layer is operatively applied with the common electric potential to act as another common electrode,

a first storage capacitor is formed by the shielding electrode layer and the first pixel electrode, and

a second storage capacitor is formed by the common electrode layer and the second pixel electrode.

2. The TFT array substrate according to claim 1 , wherein the first pixel electrode has an overlapping portion overlapped by at least one of an adjacent scan line and an adjacent data line.

3. The TFT array substrate according to claim 1 , wherein the shielding electrode layer covers the TFT switches.

4. The TFT array substrate according to claim 1 , wherein the first pixel electrode has one or more overlapping portions overlapped by the adjacent data line and by the adjacent scan line.

5. The TFT array substrate according to claim 1 , wherein the second pixel electrode is formed by the drain electrode extending in a pixel region.

6. The TFT array substrate according to claim 1 , wherein the first pixel electrode is adjacent to the second pixel electrode.

7. The TFT array substrate according to claim 6 , wherein the first pixel electrode and the second pixel electrode are positioned in an alternating arrangement.

8. The TFT array substrate according to claim 7 , wherein the first pixel electrode has an overlapping portion overlapped by the second pixel electrode.

9. The TFT array substrate according to claim 8 , wherein in the overlapping portion, the shielding electrode layer extends to the overlapping portion of the first pixel electrode and the second pixel electrode.

10. A display panel, comprising:

a TFT array substrate, comprising:

a substrate;

an array of TFT switches disposed on the substrate, the array of TFT switches comprising:

a plurality of scan lines,

a plurality of data lines intersecting with the plurality of scan lines, and

a plurality of TFT switches, wherein each of the TFT switches comprises a gate electrode electrically connected to a scan line, a source electrode electrically connected to a data line, and a drain electrode;

an array of pixel electrodes disposed on the substrate, wherein:

each of the pixel electrodes is electrically connected to the drain electrode of a corresponding TFT switch,

a first pixel electrode in the array of the pixel electrodes has an overlapping portion overlapped by at least one of the scan lines and the data lines, and wherein in the overlapping portion, a shielding electrode layer is located between the first pixel electrode and at least one of the scan line and the data line overlapping the first pixel electrode,

a second electrode in the array of the pixel electrodes and the drain electrode of the corresponding TFT switch are on a same layer and are electrically connected,

a common electrode layer, operatively applied with a common electric potential, is disposed between the substrate and the second pixel electrode;

the shielding electrode layer is operatively applied with the common electric potential to act as another common electrode;

a first storage capacitor is formed by the shielding electrode layer and the first pixel electrode; and

a second storage capacitor is formed by the common electrode layer and the second pixel electrode;

an electronic paper film disposed over the TFT array substrate;

a transparent electrode disposed over the electronic paper film; and

a transparent substrate disposed over the transparent electrode.

11. A display panel, comprising:

a substrate;

an array of TFT switches disposed on the substrate, the array of TFT switches comprising:

a plurality of scan lines,

a plurality of data lines intersecting with the plurality of scan lines, and

a plurality of TFT switches, wherein each of the TFT switches comprises a gate electrode electrically connected to a scan line, a source electrode electrically connected to a data line, and a drain electrode;

an array of pixel electrodes disposed on the substrate, wherein:

each of the pixel electrodes is electrically connected to the drain electrode of a corresponding TFT switch,

a first pixel electrode in the array of the pixel electrodes has an overlapping portion overlapped by at least one of the scan lines and the data lines, and wherein in the overlapping portion, a shielding electrode layer is located between the first pixel electrode and at least one of the scan line and the data line overlapping the first pixel electrode,

a second pixel electrodes in the array of the pixel electrodes and the drain electrode of the corresponding TFT switch are in a same layer and are electrically connected,

a common electrode layer, applied with a common electric potential, is disposed between the substrate and the second pixel electrode,

the shielding electrode layer is operatively applied with the common electric potential to act as another common electrode,

a first storage capacitor is formed by the shielding electrode layer and the first pixel electrode, and

a second storage capacitor is formed by the common electrode layer and the second pixel electrode;

a reflective layer disposed over the TFT array substrate;

a liquid crystal layer disposed over the reflection layer; and

a light filter plate disposed over the liquid crystal layer.

12. A method of manufacturing a TFT array substrate, comprising:

providing a substrate;

forming an array of TFT switches and a common electrode layer on the substrate, the array of the TFT switches comprising a plurality of scan lines, a plurality of data lines intersecting with the plurality of scan lines, and a plurality of TFT switches, each of the TFT switches comprising a gate electrode electrically connected to a scan line, a source electrode electrically connected to a data line, and a drain electrode, at least one drain electrode extending in a pixel region as a second pixel electrode, the second pixel electrode being opposite to the common electrode layer, wherein the second pixel electrode and the drain electrode of the corresponding TFT switch are on a same layer and are electrically connected, and wherein a common electrode layer is disposed between the substrate and the second pixel electrode;

forming a first insulating layer covering the array of the TFT switches and the substrate;

forming a conductive layer on the first insulating layer;

patterning the conductive layer to form a shielding electrode layer, the shielding electrode layer having a second opening in a region of the second pixel electrode and having an overlapping portion overlapped by at least one of the scan lines and the data lines;

forming a second insulating layer covering the shielding electrode layer and the second opening;

etching the first insulating layer and the second insulating layer to form a plurality of via holes exposing the drain electrodes;

forming a first pixel electrode layer on the second insulating layer; and

patterning the first pixel electrode layer to form a first pixel electrode, wherein the first pixel electrode and the second pixel electrode are positioned in an alternate arrangement, wherein each first pixel is electrically connected to the drain electrode of the corresponding TFT switch through one of the via holes, and the first pixel electrode covers the overlapping portion, the common electrode layer is operatively applied with a common electric potential, the shielding electrode layer is also operatively applied with the common electric potential to act as another common electrode, a first storage capacitor is formed by the shielding electrode layer and the first pixel electrode, and a second storage capacitor is formed by the common electrode layer and the second pixel electrode.

13. The method of manufacturing the TFT array substrate according to claim 12 , wherein the shielding electrode layer has one or more overlapping portions overlapped by the data line and the scan line.

14. The method of manufacturing the TFT array substrate according to claim 12 , wherein the first pixel electrode has an overlapping portion overlapped by the second pixel electrode.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2021
From: SHENZHEN HIWEND COMMUNICATION CO., LTD
To: BEIHAI HKC OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 055523/0014 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2021
From: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.
To: SHENZHEN HIWEND COMMUNICATION CO., LTD
Reel/Frame 055513/0509 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2013
From: CHEN, HAO; MA, JUN; WU, TIANYI
To: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.
Reel/Frame 030929/0205 →