IP Library Granted Patent US 9,583,331
Granted Patent B2
US 9,583,331 · App. 13/957,697 · Granted Feb 28, 2017

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

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Quick Facts
Patent No.
US 9,583,331
App. No.
13/957,697
Granted
Feb 28, 2017
Kind
B2
Abstract

A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.

Claims (11)

1. A manufacturing method of a semiconductor device comprising:

cleaning a semiconductor substrate;

rinsing the surface of the semiconductor substrate with deionized water;

displacing the deionized water with alcohol;

simultaneously supplying a first chemical liquid for forming a water-repellent protection film on a surface of the semiconductor substrate and a second chemical liquid for covering the first chemical liquid covering the surface of the semiconductor substrate by a nozzle, the second chemical liquid not being mixed with the first chemical liquid and not reacting to the first chemical liquid, and the first chemical liquid being below the second chemical liquid; and

displacing the first chemical liquid and the second chemical liquid with alcohol;

rinsing the alcohol with deionized water; and

drying the semiconductor substrate, wherein

the first chemical liquid is an insoluble water-repellent agent and the second chemical liquid is a soluble chemical liquid,

a specific gravity of the second chemical liquid is lower than a specific gravity of the first chemical liquid.

2. The method of claim 1 , wherein the first chemical liquid is a silane coupling agent.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043052/0218 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2013
From: KIMURA, SHINSUKE; OGAWA, YOSHIHIRO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 030932/0363 →