Semiconductor device
View Patent ↗The present invention aims to relax stress induced by through-silicon via formed on semiconductor substrate in order to prevent property fluctuation of a transistor. A semiconductor device includes a semiconductor substrate, a through-silicon via formed in semiconductor substrate, an insulating film formed between the semiconductor substrate and the through-silicon via, and a transistor formed on the semiconductor substrate so as to be apart from the through-silicon via with a predetermined distance. The insulating film does not exist on a region close to a surface of the semiconductor substrate between the semiconductor substrate and the through-silicon via. A gap is formed to be surrounded by the semiconductor substrate, the through silicon via, and the insulating film under the region close to the surface of the semiconductor substrate.
1. A semiconductor device comprising:
a semiconductor substrate;
a through-silicon via formed in the semiconductor substrate;
an insulating film formed to be interposed between the semiconductor substrate and the through-silicon via; and
a transistor formed on the semiconductor substrate so as to be apart from the through-silicon via with a predetermined distance,
wherein the insulating film does not exist on a region close to a surface of the semiconductor substrate between the semiconductor substrate and the through-silicon via,
a gap is formed to be directly surrounded by the semiconductor substrate, the through-silicon via, and the insulating film under the region close to the surface of the semiconductor substrate, and
a portion of the semiconductor substrate and a portion of the through-silicon via are exposed in the gap.
2. The semiconductor device according to claim 1 ,
wherein the through-silicon via is formed to penetrate through a first interlayer insulating film formed on the semiconductor substrate, and
the gap is also formed in the first interlayer insulating film.
3. The semiconductor device according to claim 1 , wherein the predetermined distance and a depth of the gap from the surface of the semiconductor substrate are substantially equal to each other.
4. The semiconductor device according to claim 1 , further comprising:
a second interlayer insulating film on the through-silicon via, and
the second interlayer insulating film is embedded in a part of the gap.
5. The semiconductor device according to claim 1 , wherein the insulating film is made of a silicon nitride film.
6. The semiconductor device according to claim 1 , wherein a stress liner film that applies stress to the transistor is formed on the semiconductor substrate excluding a region on the through-silicon via and a surrounding region thereof.
7. The semiconductor device according to claim 1 , wherein the through-silicon via includes an outside barrier film and an inside conductive film.