IP Library Granted Patent US 9,006,678
Granted Patent B2
US 9,006,678 · App. 13/960,006 · Granted Apr 14, 2015

Non-radioactive ion source using high energy electrons

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Quick Facts
Patent No.
US 9,006,678
App. No.
13/960,006
Granted
Apr 14, 2015
Kind
B2
Abstract

A system and method for producing a continuous or pulsed source of high energy electrons at or near atmospheric pressure is disclosed. High energy electrons are used to ionize analyte molecules in ambient air through collisions with reactant ions. The device includes an electron emitter, electron optics, and a thin membrane in an evacuated tube. The electron emitter may include a photocathode surface mounted on an optically transparent window and an external source of UV photons. The transparent window may include a UV transparent window mounted on an evacuated tube and/or the evacuated tube may be a transparent tube on which a photocathode surface film is deposited. The electron optics may include successive electrodes biased at increasing voltages. The membrane may include a material transparent or semi-transparent to energetic electrons. Upon impacting the membrane, continuous or pulsed electron packets are partially transmitted through to a high pressure ionization region.

Claims (32)

1. A high energy electron source device for ionization, comprising:

an electron emitter disposed within an evacuated tube behind an optically transparent portion of the evacuated tube, wherein the electron emitter includes a photocathode element that emits electrons when excited by photons received at the photocathode element through the optically transparent portion of the evacuated tube;

electron optics that control a flow of electrons along the evacuated tube, wherein the electron optics include a plurality of electrodes disposed along the evacuated tube, wherein the plurality of electrodes are biased to control a final electron energy of the electrons arriving at the membrane; and

a membrane disposed at an end of the evacuated tube downstream from the flow of electrons caused by the electron optics, wherein the electrons arriving at the membrane from the electron optics pass through the membrane to yield high energy electrons, wherein the membrane has at least one property specified to permeate through the membrane the high energy electrons having energies down to a cutoff value such that a range of electron energies of the high energy electrons emitted from the membrane is adjustable using: (i) control of the voltages of the plurality of electrodes of the electron optics that determines an upper limit of the range of electron energies and (ii) the at least one property of the membrane that determines the lower limit of the range of electron energies according to the cutoff value.

2. The high energy electron source device according to claim 1 , wherein the plurality of electrodes are biased at increasing voltages to control the final electron energy of the electrons arriving at the membrane.

3. The high energy electron source device according to claim 1 , wherein the photocathode element is a photocathode surface film deposited on the optically transparent portion of the evacuated tube.

4. The high energy electron source device according to claim 1 , wherein the photocathode element is at least one of: a solid, a mesh, a needle, or a wire made of electrically conducting material.

5. The high energy electron source device according to claim 1 , wherein the evacuated tube is a transparent tube made of a UV transparent material.

6. The high energy electron source device according to claim 1 , wherein the evacuated tube is a non-transparent tube having a transparent window as the optically transparent portion.

7. The high energy electron source device according to claim 1 , wherein the membrane is a non-metallic thin film.

8. A method for producing high energy electrons for ionization, comprising:

exciting an electron emitter disposed within an evacuated tube behind an optically transparent portion of the evacuated tube, wherein the electron emitter includes a photocathode element that emits electrons when excited by photons received at the photocathode element through the optically transparent portion of the evacuated tube;

controlling a flow of the electrons along the evacuated tube using electron optics, wherein the electron optics include a plurality of electrodes disposed along the evacuated tube, wherein the plurality of electrodes are biased to control a final electron energy of the electrons arriving at the membrane; and

passing the electrons through a membrane disposed at an end of the evacuated tube downstream from the flow of electrons caused by the electron optics, wherein the electrons that pass through the membrane are high energy electrons, wherein the membrane has at least one property specified permeate through the membrane the high energy electrons having energies down to a cutoff value such that a range of electron energies of the high energy electrons emitted from the membrane is adjustable using: (i) control of the voltages of the plurality of electrodes of the electron optics that determines an upper limit of the range of electron energies and (ii) the at least one property of the membrane that determines the lower limit of the range of electron energies according to the cutoff value.

9. The method according to claim 8 , wherein the plurality of electrodes are biased at increasing voltages to control the final electron energy of the electrons arriving at the membrane.

10. The method according to claim 8 , wherein the photocathode element is a photocathode surface film deposited on the optically transparent portion of the evacuated tube.

11. The method according to claim 8 , wherein the photocathode element is at least one of: a solid, a mesh, a needle, or a wire made of electrically conducting material.

12. The method according to claim 8 , wherein the evacuated tube is a transparent tube made of a UV transparent material.

13. The method according to claim 8 , wherein the evacuated tube is a non-transparent tube having a transparent window as the optically transparent portion.

14. The method according to claim 8 , wherein the membrane is a non-metallic thin film.

15. The high energy electron source device according to claim 1 , wherein the high energy electrons passing through the membrane are controllably provided as continuous or pulsed electron packets according to exposure of the photocathode element to the photons.

16. The high energy electron source device according to claim 1 , wherein the high energy electrons passing through the membrane enable ionization, using the high energy electron source device as a non-radioactive electron source, of atomic or molecular species at atmospheric or near atmospheric pressure for subsequent ion analysis.

17. The high energy electron source device according to claim 1 , further comprising:

a UV photon source that generates the photons received at the photocathode element through the optically transparent portion of the evacuated tube.

18. The method according to claim 8 , wherein the high energy electrons passing through the membrane are controllably provided as continuous or pulsed electron packets according to exposure of the photocathode element to the photons.

19. The method according to claim 8 , wherein the high energy electrons passing through the membrane enable ionization, using a non-radioactive electron source, of atomic or molecular species at atmospheric or near atmospheric pressure for subsequent ion analysis.

20. The method according to claim 8 , further comprising:

a UV photon source that generates the photons received at the photocathode element through the optically transparent portion of the evacuated tube.

21. The high energy electron source device according to claim 1 , wherein the at least one property of the membrane includes a thickness of the membrane.

22. The high energy electron source device according to claim 1 , wherein the membrane is made of silicon nitride.

23. The method according to claim 8 , wherein the at least one property of the membrane includes a thickness of the membrane.

24. The method according to claim 8 , wherein the membrane is made of silicon nitride.

Assignments (6)
CHANGE OF NAME Recorded Feb 26, 2021
From: L3 SECURITY AND DETECTION SYSTEMS, INC.
To: LEIDOS SECURITY DETECTION AND AUTOMATION INC.
Reel/Frame 055430/0816 →
BANKRUPTCY ORDER TO RELEASE LEGACY LIENS Recorded Feb 24, 2020
From: BAM ADMINISTRATIVE SERVICES LLC
To: IMPLANT SCIENCES CORPORATION; C ACQUISITION CORP.; ACCUREL SYSTEMS INTERNATIONAL CORPORATION; IMX ACQUISITION CORP.
Reel/Frame 052783/0013 →
CHANGE OF NAME Recorded Nov 20, 2019
From: L-3 COMMUNICATIONS SECURITY AND DETECTION SYSTEMS, INC.
To: L3 SECURITY & DETECTION SYSTEMS, INC.
Reel/Frame 051060/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2019
From: IMPLANT SCIENCES CORPORATION; C ACQUISITION CORP; ACCUREL SYSTEMS INTERNATIONAL CORPORATION; IMX ACQUISITION CORP.
To: L-3 COMMUNICATIONS SECURITY AND DETECTION SYSTEMS, INC.
Reel/Frame 050979/0504 →
SECURITY INTEREST Recorded Jan 26, 2016
From: IMPLANT SCIENCES CORPORATION; C ACQUISITION CORP.; ACCUREL SYSTEMS INTERNATIONAL CORPORATION; IMX ACQUISITION CORP.
To: BAM ADMINISTRATIVE SERVICES LLC
Reel/Frame 037584/0124 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2014
From: IVASHIN, DMITRIY V.; BOUMSELLEK, SAID
To: IMPLANT SCIENCES CORPORATION
Reel/Frame 032105/0592 →