PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT
A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric film represented by a general formula of (Na x K y Li z )NbO 3 (0<x≦1, 0<y≦1, 0≦x≦0.2, x+y+z=1) and an upper electrode layer formed on the substrate. The piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist. A difference between the maximum value and the minimum value of an energy of Na-K absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in a direction of the film thickness of the piezoelectric film is not more than 0.8 eV.
1 . A piezoelectric element, comprising:
a substrate; and
a lower electrode layer, a piezoelectric film represented by a general formula of (Na x K y Li z )NbO 3 (0<x≦1, 0<y≦1, 0≦z≦0.2, x+ y +z=1) and an upper electrode layer formed on the substrate,
wherein the piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist, and
wherein a difference between the maximum value and the minimum value of an energy of Na—K absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in a direction of the film thickness of the piezoelectric film is not more than 0.8 eV.
2 . The piezoelectric element according to claim 1 , wherein a difference between the maximum value and the minimum value of an energy of K-L 2 absorption edge or/and an energy of K-L 3 absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in the film thickness direction of the piezoelectric film is not more than 0.8 eV.
3 . The piezoelectric element, comprising:
a substrate; and
a lower electrode layer, a piezoelectric film and an upper electrode layer successively formed on the substrate,
wherein the piezoelectric film has a composition of crystal or amorphous represented by a general formula of ABO 3 , or the mixture of the crystal and the amorphous in at least a part thereof, where A represents at least one element of Li, Na, K, Pb, La, Sr, Nd, Ba and Bi, B represents at least one element of Zr, Ti, Mn, Mg, Nb, Sn, Sb, Ta and In, and O represents oxygen, and
wherein a difference between the maximum value and the minimum value of an energy of the A atom absorption edge or/and an energy of the B atom absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in the film thickness direction of the piezoelectric film is not more than 0.8 eV.
4 . The piezoelectric element according to claim 1 , wherein the lower electrode layer comprises an electrode layer that is formed of a single layer or a multilayer structure, and is preferentially oriented in a direction perpendicular to the surface of the substrate in the crystal orientation.
5 . The piezoelectric element according to claim 1 , wherein the lower electrode layer comprise an electrode layer comprising Pt or an alloy containing Pt as a main component, or an electrode layer having a multilayer structure including a layer comprising Pt as a main component.
6 . The piezoelectric element according to claim 1 , wherein the lower electrode layer comprises an electrode layer comprising at least one element of Ru, Ir, Sn and In or the oxide of the elements.
7 . The piezoelectric element according to claim 1 , wherein the upper electrode layer comprises an electrode layer comprising Pt or an alloy containing Pt as a main component, or an electrode layer having a multilayer structure including a layer comprising Pt as a main component.
8 . The piezoelectric element according to claim 1 , wherein the upper electrode layer comprises an electrode layer comprising at least one element of Ru, Ir, Sn and In or the oxide of the elements.
9 . The piezoelectric element according to claim 1 , wherein the substrate comprises Si, MgO, ZnO, SrTiO 3 , SrRuO 3 , glass, quartz glass, GaAs, GaN, sapphire, Ge or stainless steel.
10 . A piezoelectric device, comprising:
the piezoelectric element according to claim 1 ; and
a voltage applying device or a voltage detecting device connected between the lower electrode layer and the upper electrode layer of the piezoelectric element.
11 . A method of manufacturing a piezoelectric element, wherein the piezoelectric element comprises a substrate and a lower electrode layer, a piezoelectric film represented by a general formula of (Na x K y Li z )NbO 3 (0<x≦1, 0<y≦1, 0≦z≦0.2, x+y+z=1) and an upper electrode layer formed on the substrate, comprising:
forming the piezoelectric film having a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or having a state that at least two of the crystal structures coexist;
after the formation of the piezoelectric film, carrying out a heat treatment of the piezoelectric film in a vacuum, in an inert gas atmosphere, in O 2 , in an O 2 and inert gas mixed gas, or in the air; and
controlling a difference between the maximum value and the minimum value of an energy of Na—K absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in the film thickness direction of the piezoelectric film to be not more than 0.8 eV.
12 . The method according to claim 11 , wherein a difference between the maximum value and the minimum value of an energy of K-L 2 absorption edge or/and an energy of K-L 3 absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in the film thickness direction of the piezoelectric film is controlled to be not more than 0.8 eV.
13 . A method of manufacturing a piezoelectric element, wherein the piezoelectric element comprises a substrate and a lower electrode layer, a piezoelectric film and an upper electrode layer formed on the substrate, comprising:
forming the piezoelectric film having a composition of crystal or amorphous represented by a general formula of ABO 3 , or the mixture of the crystal and the amorphous in at least a part thereof, where A represents at least one element of Li, Na, K, Pb, La, Sr, Nd, Ba and Bi, B represents at least one element of Zr, Ti, Mn, Mg, Nb, Sn, Sb, Ta and In, and O represents oxygen;
after the formation of the piezoelectric film, carrying out a heat treatment of the piezoelectric film in a vacuum, in an inert gas atmosphere, in O 2 , in an O 2 and inert gas mixed gas, or in the air; and
controlling a difference between the maximum value and the minimum value of an energy of the A atom absorption edge or/and an energy of the B atom absorption edge measured by an electron energy-loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in the film thickness direction of the piezoelectric film to be not more than 0.8 eV.