Metal oxide thin film substrate, method of fabricating the same, photovoltaic cell and OLED including the same

1. A metal oxide thin film substrate comprising:

a base substrate; and

a metal oxide thin film formed on the base substrate, the metal oxide thin film having voids which are formed inside the metal oxide thin film to scatter light,

wherein the metal oxide thin film comprises:

a first metal oxide thin film formed on the base substrate and having a first texture on a surface thereof; and

a second metal oxide thin film formed on the first metal oxide thin film and having a second texture on a surface thereof, the second metal oxide thin film comprising an assembly of unit elements each having a polyhedron shape and each having a plurality of faces each having a polygon shape, a width of each of the unit elements between respective faces of each unit element increasing in a direction toward an upper end of the unit element such that the faces of the polyhedrons of the unit elements of the second metal oxide thin film define the voids together with the first metal oxide thin film.

2. The metal oxide thin film substrate of claim 1 , wherein the voids are connected to each other in a direction parallel to the base substrate.

3. The metal oxide thin film substrate of claim 2 , wherein a width of each of the voids ranges from 50 to 400 nm.

4. The metal oxide thin film substrate of claim 1 , wherein the metal oxide thin film comprises a material, a refractive index of which is higher than a refractive index (1.0) of the voids, so as to increase a scattering characteristic.

5. The metal oxide thin film substrate of claim 4 , wherein the metal oxide thin film comprises one selected from the group consisting of ZnO, Sn 0 2 , SiO 2 , TiO 2 and NiO.

6. The metal oxide thin film substrate of claim 5 , wherein the metal oxide thin film is doped with an n-type or p-type dopant.

7. The metal oxide thin film substrate of claim 6 , wherein the metal oxide thin film comprises one selected from the group consisting of n-type ZnO doped with at least one of Ga, Al and F, F-doped SnO 2 , SiO 2 doped with an electron donor element or a hole element, TiO 2 doped with an electron donor element, and NiO doped with an electron donor element.

8. The metal oxide thin film substrate of claim 5 , wherein a sheet resistance of the metal oxide thin film ranges from 2 to 20Ω/□.

9. The metal oxide thin film substrate of claim 4 , wherein the metal oxide thin film comprises one selected from the group of metal oxides consisting of CuAlO 2 , CuGaO 2 , CuInO 2 , SrCu 2 O 2 and LaCuOA (A=chalcogen).

10. The metal oxide thin film substrate of claim 1 , wherein a haze value of the metal oxide thin film ranges from 3 to 100%.

11. A photovoltaic cell comprising a metal oxide thin film substrate recited in claim 1 as a transparent electrode substrate.

12. An organic light-emitting device comprising a metal oxide thin film substrate recited in claim 1 as a light extraction layer substrate.