Method For Preparing Scandium-Doped Hafnium Oxide Film
A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.
1 . A method for preparing scandium-doped hafnium oxide film, comprising:
preparing a hafnium target having scandium granules distributed on a peripheral surface thereof, wherein an area of the scandium granules to a peripheral surface of the hafnium target occupation ratio is 6.90-30.57%; and
proceeding a sputtering process with the hafnium target to form a scandium-doped hafnium oxide film, wherein argon and oxygen are added with a flow rate of 1:1, and pressure in the sputtering process is selectively adjusted to 1×10 −2 and 5×10 −7 torr.
2 . A scandium-doped hafnium oxide film as claimed in claim 1 having a scandium doping density of 3-13 at %.