Semiconductor device and method for manufacturing the same

1. A method of manufacturing a semiconductor device comprising:

forming a lower electrode pattern over a substrate;

forming a first interlayer insulating layer over the lower electrode pattern;

forming an upper electrode pattern over the first interlayer insulating layer;

forming a second interlayer insulating layer over the upper electrode pattern;

forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer;

forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer; and

forming a contact ball in the cavity.

2. The method of claim 1 , comprising forming an etch stop film between the lower electrode pattern and the first interlayer insulating layer.

3. The method of claim 1 , wherein said forming a lower electrode pattern comprises forming a plurality of lower electrodes spaced apart from one another over the substrate.

4. The method of claim 1 , wherein said forming an upper electrode pattern comprises forming a plurality of upper electrodes spaced apart from one another over the first interlayer insulating layer.

5. The method of claim 4 , wherein said forming an etch blocking layer comprises forming an etch blocking layer covering a side of each of the plurality of upper electrodes.

6. The method of claim 4 , wherein said forming an etch blocking layer comprises:

forming a plurality of trenches, where each of the plurality of trenches exposes a side of each of the plurality of the upper electrodes; and

forming the etch blocking layer by filling the plurality of trenches with a conductive material.

7. The method of claim 1 , wherein:

the upper electrode pattern comprises at least one of Al, Cu, Au, and an alloy including at least one of Al, Cu, and Au;

the first interlayer insulating layer and the second interlayer insulating layer comprise at least one of SiO 2 , Si x N y (where x, and y are real numbers), FSG (Fluoro Silicate glass), USG (Undoped Silicate Glass), BPSG (Boron Phospho Silicate Glass), and TEOS (TetraEthOxySilane); and

the etch blocking layer comprises tungsten.

8. The method of claim 6 , wherein each of the trenches exposes a portion of an upper side of the upper electrode adjacent to an exposed side of the upper electrode.

9. The method of claim 4 , wherein said forming the etch blocking layer comprises forming the etch blocking layer over a side of the upper electrode and over a portion of the upper side of the upper electrode adjacent to the side of the upper electrode.

10. The method of claim 2 , wherein said forming the etch blocking layer comprises forming the etch blocking layer to be in contact with the etch stop film and passes through the second interlayer insulating layer.

11. The method of claim 10 , wherein said etching the second interlayer insulating layer to form a cavity comprises:

forming a hole which exposes the etch stop film by first etching the second interlayer insulating layer and the first interlayer insulating layer; and

forming a cavity which exposes the etch blocking layer by second etching the second interlayer insulating layer and the first interlayer insulating layer which are first etched.

12. The method of claim 11 , wherein the first etching is dry etching and the second etching is wet etching.

13. The method of claim 6 , comprising forming a barrier layer between the etch blocking layer and the trench.

14. The method of claim 2 , comprising:

forming a contact in contact with the lower electrode pattern which passes through the first interlayer insulating layer and the etch stop film; and

forming the second upper electrode pattern to be in contact with the contact.