Semiconductor device

1. A semiconductor device, comprising:

a die pad comprised of a metal, and having at least one cutout portion in its peripheral edge portion, and a protruding portion formed by the cutout portion so as to protrude laterally from the peripheral edge portion;

a first inner lead having at its end a bonding pad that is placed in the cutout portion with an interval between the bonding, pad and the die pad;

a semiconductor chip held on the die pad so that a center position of the semiconductor chip is located on the protruding portion side with respect to a center position of the die pad; and

a wire configured to electrically connect the semiconductor chip to the bonding pad,

wherein the bonding pad has a first extended portion extending along a side surface of the die pad with an interval therebetween,

the side surface of the die pad extends from the cutout portion in a first direction,

the die pad further includes a suspension lead extending from the protruding portion,

a width of the protruding portion is greater than a width of the suspension lead,

the semiconductor chip is disposed on at least a portion of the protruding portion, and

in a plan view, a length of the first extended portion in the first direction is greater than a length of the side surface of the die pad in the first direction.

2. The semiconductor device of claim 1 , wherein a ground potential is applied to the die pad, and

a capacitive element portion is formed by the first extended portion and the side surface of the die pad.

3. The semiconductor device of claim 1 , wherein an upper surface of the die pad and an upper surface of the bonding pad are located at the same height from a lower surface of the die pad, and

the die pad has a greater thickness than the first inner lead.

4. The semiconductor device of claim wherein the cutout portion has a planar shape corresponding to two sides of a quadrilateral, one side of a triangle, a concave circular arc, or a convex circular arc.

5. The semiconductor device of claim 1 , wherein the suspension lead includes a bent portion.

6. The semiconductor device of claim 1 , wherein the first inner lead further includes a second extended portion physically connected to the bonding pad.

7. The semiconductor device of claim 6 , wherein the first extended portion extends parallel to the second extended portion in a plan view.

8. The semiconductor device of claim 6 , wherein the second extended portion includes a bent portion.

9. The semiconductor device of claim 6 , wherein the second extended portion extends from the bonding pad at an intermediate part of the bonding pad.

10. The semiconductor device of claim 6 , wherein the die pad further includes a suspension lead extending from the protruding portion.

11. The semiconductor device of claim 10 , wherein the suspension lead extends parallel to the second extended portion in a plan view.

12. The semiconductor device of claim 1 , wherein the first extended portion functions as an open-circuited stub.

13. The semiconductor device of claim 1 , wherein an end of the first extended portion and an end of the die pad arc aligned in a plan view.

14. The semiconductor device of claim 1 , wherein the first extended portion has a portion which is thicker than a portion oldie bonding pad placed in the cutout portion.

15. The semiconductor device of claim 1 , wherein the bonding pad and the first extended portion form an L-shape in a plan view.

16. The semiconductor device, of claim 1 , wherein the bonding pad extends in a first direction in a plan view, and the first extended portion extends in a second direction in a plan view, and

the second direction and the first direction are different.

17. A semiconductor device, comprising:

a die pad comprised ala metal, and having at least one cutout portion hi its peripheral edge portion, and a protruding portion formed by the cutout portion;

a first inner lead having a bonding pad that is placed in the cutout portion with an interval between the bonding pad and the die pad;

a semiconductor chip held on the die pad; and

a wire configured to electrically connect the semiconductor chip to the bonding pad,

wherein the bonding pad has a first extended portion extending along a side surface of the die pad with an interval therebetween,

the side surface of the die pad extends from the cutout portion in a first direction, and

in a plain view, a length of the first extended portion in the first direction is greater than a length of the side surface of the die pad in the first direction.

18. The semiconductor device of claim 17 , wherein the first inner lead further includes a second extended portion physically connected to the bonding pad.

19. The semiconductor device of claim 18 , wherein the second extended portion extends from the bonding pad at an intermediate part of the bonding pad.

20. The semiconductor device of claim 17 , wherein the bonding pad extends in a is direction in a plan view, and the first extended portion extends in a second direction in a plan view, and

the second direction and the first direction are different.

21. The semiconductor device of claim 17 , wherein a center position of the semiconductor chip is located on the protruding portion side with respect to a center position of the die pad.

22. The semiconductor device of claim 17 , wherein the die pad further includes a suspension lead extending from the protruding portion, and a width of the protruding portion is greater than a width of the suspension lead.

23. The semiconductor device of claim 17 , wherein the semiconductor chip is disposed on at least a portion of the protruding portion.