Liquid crystal display device
View Patent ↗In a liquid crystal display device including: TFT substrate; color filter; counter electrode; interlayer insulation film; pixel electrode; alignment film; liquid crystal layer; counter substrate; and Si semiconductor layer. The color filter, counter electrode, interlayer insulation film, pixel electrode, and alignment film being formed on the side where the TFT substrate is provided, the counter substrate being disposed in facing relation to the TFT substrate with the liquid crystal layer put between the counter substrate and TFT substrate, the Si semiconductor layer is formed between the pixel electrode and interlayer insulation film. Even when light from a backlight is absorbed by the color filter and sufficient light cannot reach the alignment film, electric charges accumulated on the alignment film can escape to the pixel electrode in an early stage by the Si semiconductor layer formed under the alignment film, thereby capable of erasing the afterimage in an early stage.
1. A liquid crystal display device comprising:
a TFT substrate;
a counter electrode;
an interlayer insulation film;
a pixel electrode;
an alignment film;
a liquid crystal layer;
a counter substrate having a color filter formed therein; and
a Si semiconductor layer,
wherein the counter electrode, the interlayer insulation film, the pixel electrode, and the alignment film being formed on the side where the TFT substrate is provided,
the interlayer insulation film is provided between the pixel electrode and the counter electrode,
the counter substrate is disposed in facing relation to the TFT substrate with the liquid crystal layer put between the counter substrate and the TFT substrate,
the Si semiconductor layer is formed between the pixel electrode and the interlayer insulation film,
the Si semiconductor layer directly contacts with the pixel electrode,
wherein the counter electrode is formed between the interlayer insulation film and the TFT substrate, and
wherein an interconnect layer including TFTs, video signal lines, and scanning lines is formed between the counter electrode and the TFT substrate.
2. The liquid crystal display device according to claim 1 , wherein
the Si semiconductor layer comprises a-Si.
3. The liquid crystal display device according to claim 1 , wherein
the Si semiconductor layer has a thickness of 5 nm to 100 nm.
4. A liquid crystal display device according to claim 1 , wherein
the Si semiconductor layer is formed between the alignment film and the interlayer insulation film.
5. The liquid crystal display device according to claim 1 , wherein
the Si semiconductor layer is commonly formed over a plurality of pixels.