Neutron detection

1. An apparatus for neutron imaging comprising:

a microchannel plate comprising a structure that defines a plurality of microchannels;

layers of materials disposed on walls of the microchannels, the layers including a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material, the neutron sensitive material having a composition that is different from that of the structure; and

an image sensor to detect electrons that emerge from the microchannels to generate an image.

2. The apparatus of claim 1 in which the layer of neutron sensitive material comprises at least 50 mol % of neutron sensitive material.

3. The apparatus of claim 1 in which the layer of neutron sensitive material comprises at least one of boron-10, lithium-6, or gadolinium.

4. The apparatus of claim 1 in which the layer of neutron sensitive material comprises a compound that comprises at least one of boron-10, lithium-6, or gadolinium, and the compound comprises at least one of boron-10 oxide, boron-10 nitride, lithium-6 oxide, or gadolinium oxide.

5. The apparatus of claim 1 in which the structure comprises glass.

6. The apparatus of claim 5 in which the glass has less than 25 mol % lead (Pb).

7. The apparatus of claim 5 in which the glass has less than 1 mol % lead (Pb).

8. The apparatus of claim 5 in which the glass has less than 25 mol % of elements having an atomic number greater than 34.

9. The apparatus of claim 5 in which the glass has less than 1 mol % of elements having an atomic number greater than 34.

10. The apparatus of claim 5 in which the glass has less than 20 mol % of neutron sensitive material.

11. The apparatus of claim 5 in which the glass has less than 1 mol % of neutron sensitive material.

12. The apparatus of claim 5 in which the layer of neutron sensitive material does not include glass.

13. The apparatus of claim 1 in which the semiconducting material comprises AlZn x O y alloy, x and y being positive integers.

14. The apparatus of claim 1 in which the electron emissive material comprises at least one of aluminum oxide (Al 2 O 3 ) or magnesium oxide (MgO).

15. The apparatus of claim 1 , comprising a gamma ray detector to detect gamma rays, and a coincidence unit to determine whether a signal output from the gamma ray detector indicating detection of a gamma ray occurs within a predetermined time period after a signal output from the microchannel plate indicating detection of at least one of a neutron or a gamma ray.

16. The apparatus of claim 15 in which the neutron sensitive material comprises at least one of boron-10 or gadolinium.

17. The apparatus of claim 1 in which the microchannel plate comprises an input electrode, an output electrode, and a glass plate comprising the microchannels, and the apparatus further comprising a data processor to determine whether a neutron has been detected based on first information derived from a first charge induced on the input electrode and second information derived from a second charge induced on the output electrode.

18. The apparatus of claim 17 in which the data processor is configured to calculate a ratio between the first charge and the second charge, calculate a sum of the first and second charges, and determine whether a neutron has been detected based on the ratio and the sum.

19. The apparatus of claim 18 in which the data processor is configured to calculate a parameter value based on dividing the ratio by the sum, compare the parameter value with a predetermined range of values, and determine that a neutron has been detected when the parameter value is within the predetermined range of values.

20. The apparatus of claim 17 in which the neutron sensitive material comprises at least one of boron-10 or lithium-6.

21. The apparatus of claim 1 in which the layer of neutron sensitive material has a thickness in a range from 0.5 to 5 microns.

22. The apparatus of claim 1 in which the layer of semiconducting material has a thickness in a range from 50 to 1000 nm.

23. The apparatus of claim 1 in which the layer of electron emissive material has a thickness in a range from 3 to 12 nm.

24. A method of fabricating a neutron imaging device, the method comprising:

fabricating a microchannel plate, comprising:

fabricating a structure that defines a plurality of microchannels; and

depositing a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material on walls of the microchannels; and

fabricating an image sensor to detect electrons that emerge from the microchannels to generate an image.

25. The method of claim 24 in which depositing a layer of neutron sensitive material comprises using atomic layer deposition to deposit a layer of neutron sensitive material.

26. The method of claim 25 in which using atomic layer deposition to deposit a layer of neutron sensitive material comprises using atomic layer deposition to deposit at least two of boron-10, lithium-6, or gadolinium.

27. The method of claim 24 in which depositing a layer of semiconducting material comprises using atomic layer deposition to deposit a layer of semiconducting material.

28. The method of claim 24 in which depositing a layer of electron emissive material comprises using atomic layer deposition to deposit a layer of electron emissive material.

29. The method of claim 24 in which fabricating a structure that defines a plurality of microchannels comprises fabricating a structure using a plurality of fibers each including a soluble core and a layer of cladding surrounding the soluble core, and removing the soluble core to form microchannels.

30. The method of claim 29 in which fabricating a structure comprises fabricating a structure using glass.

31. The method of claim 30 in which fabricating a structure comprises fabricating a structure using glass that has less than 1 mol % lead (Pb).

32. The method of claim 30 in which fabricating a structure comprises fabricating a structure using glass that has less than 1 mol % of elements having an atomic number greater than 34.

33. The method of claim 24 in which depositing a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material on walls of the microchannels comprises depositing a layer of neutron sensitive material, followed by depositing a layer of semiconducting material, and followed by depositing a layer of electron emissive material on walls of the microchannels.

34. The method of claim 24 in which using atomic layer deposition to deposit a layer of neutron sensitive material comprises using atomic layer deposition to deposit a layer of compound material comprising at least one of boron-10, gadolinium, or lithium-6, and the compound material comprises at least one of boron-10 oxide, boron-10 nitride, lithium-6 oxide, or gadolinium oxide.

35. A method of neutron imaging, the method comprising:

using a layer of neutron sensitive material formed on a wall of a microchannel of a microchannel plate to capture neutrons and generate reactant particles, the microchannel plate comprising a glass plate having a structure that defines the microchannel, the glass plate comprising glass having less than 25 mol % lead (Pb) and less than 20 mol % of the neutron sensitive material, the neutron sensitive material having a composition that is different from that of the glass;

detecting secondary electrons that are generated based on interactions between the reactant particles and electron emissive material on the walls of the microchannels;

generating first signals indicating detection of neutrons; and

generating an image based on the first signals.

36. The method of claim 35 , further comprising generating second signals indicating detection of the secondary electrons, generating third signals indicating detection of gamma rays, determining whether each of the third signals occurred within a specified time period after occurrence of the corresponding second signal, and generating the first signal only if the third signal occurred within the specified time period after occurrence of the corresponding second signal.

37. The method of claim 35 in which the glass plate comprises glass having less than 1 mol % lead (Pb).

38. The method of claim 35 in which the glass plate comprises glass having less than 0.1 mol % of the neutron sensitive material.