Cleaning method for thin-film processing applications and apparatus for use therein

1. A method for cleaning a processing chamber of a flexible substrate processing apparatus without breaking a vacuum in the processing chamber, the method comprising:

attaching a sacrificial foil at a start or at an end of a flexible substrate, wherein an end section of the sacrificial foil is attached to a front section of the flexible substrate or wherein a front section of the sacrificial foil is attached to an end section of the flexible substrate, wherein the sacrificial foil is abutting and not overlapping with the flexible substrate, and wherein the sacrificial foil is made of a material that is different than a material of the flexible substrate;

guiding the sacrificial foil into the processing chamber;

initiating a first pump process in the processing chamber;

plasma cleaning the processing chamber at a vacuum from 10 −1 mbar to 10 −7 mbar while the sacrificial foil is provided in the processing chamber;

initiating a second pump process in the processing chamber; and

guiding the sacrificial foil out of the processing chamber.

2. The method according to claim 1 , wherein the first pump process further comprises purging such that a first pump and purge process is provided and wherein the second pump process further comprises purging such that a second pump and purge process is provided.

3. The method according to claim 1 , wherein the first pump process further comprises purging such that a first pump and purge process is provided or wherein the second pump process further comprises purging such that a second pump and purge process is provided.

4. The method according to claim 1 , wherein guiding the sacrificial foil into the processing chamber includes at the same time guiding the flexible substrate out of the processing chamber.

5. The method according to claim 1 , further comprising guiding the flexible substrate into the processing chamber and at the same time guiding the sacrificial foil out of the processing chamber.

6. The method according to claim 1 , wherein the sacrificial foil is coated with a metal alloy or consists of a metal alloy.

7. The method according to claim 6 , wherein the metal alloy is stainless steel.

8. The method according to claim 1 , wherein plasma cleaning the processing chamber includes plasma cleaning the processing chamber with a fluorinated cleaning gas.

9. The method according to claim 1 , further comprising cooling of a processing drum in the processing chamber of the flexible substrate processing apparatus.

10. The method according to claim 2 , wherein the steps of initiating the first pump and purge process in the processing chamber, plasma cleaning the processing chamber and initiating the second pump and purge process in the processing chamber are repeated a plurality of times before guiding the flexible substrate into the processing chamber.

11. The method according to claim 1 , further comprising sealing the processing chamber after guiding the sacrificial foil into the processing chamber and before initiating the first pump process in the processing chamber.

12. The method according to claim 11 , further comprising attaching a new flexible substrate to the end section of the sacrificial foil attached to the end section of the flexible substrate on the outside of the processing chamber after sealing the processing chamber.