Semiconductor device having a thick gate insulating film covering bird's beak region
View Patent ↗By covering ends of a field insulating film in a region where a MOS transistor having a relatively thin gate insulating film is formed with a relatively thick gate insulating film, a channel region of the MOS transistor having the relatively thin gate insulating film is set apart from an inversion-preventing diffusion layer formed under the field insulating film so as not to be influenced by film thickness fluctuation of the field insulating film, etching fluctuation of the relatively thick gate insulating film, and impurity concentration fluctuation at both sides of the channel due to the inversion-preventing diffusion layer.
1. A semiconductor device comprising:
a first MOS transistor having a relatively thick gate insulating film in contact with a substrate surface; and
a second MOS transistor in an active region having a relatively thin gate insulating film in contact with a channel region and a gate electrode in contact with the relatively thin gate insulating film, the relatively thick gate insulating film having a thickness greater than a thickness of the relatively thin gate insulating film,
the channel region separating a source region and a drain region, the active region surrounded by a field insulating film, all of the source region and all of the drain region separated from a bird's beak region of the field insulating film by the relatively thick gate insulating film that covers an end region of the field insulating film in the active region of the second MOS transistor, the relatively thick gate insulating film completely surrounding the source region, the channel region, and the drain region, the gate electrode overlying the relatively thick gate insulating film at opposite sides of the gate electrode,
the bird's beak region comprising a portion of the end region of the field insulating film extending along the active region toward the channel region.
2. A semiconductor device according to claim 1 , wherein the first MOS transistor includes high concentration diffusion layers in the substrate surface serving as a source region and a drain region and a channel region, the source and drain regions separated from one another by the field insulating film and also separated from the channel region of the first MOS transistor by the field insulating film.
3. A semiconductor device comprising:
a first MOS transistor having a relatively thick gate insulating film in contact with a substrate surface, wherein the relatively thick gate insulating film is in contact with a channel region of the first MOS transistor and a relatively thin gate insulating film is in contact with a drain region and a source region thereof, the relatively thick gate insulating film having a thickness greater than a thickness of the relatively thin gate insulating film; and
a second MOS transistor in an active region surrounded by a field insulating film, the active region including the relatively thin gate insulating film in contact with a channel region, a drain region, and a source region thereof, the channel region separating the source region and the drain region, the second MOS transistor further including a gate electrode in contact with the relatively thin gate insulating film,
wherein all of the source region and all of the drain region of the second MOS transistor are separated from a bird's beak region of the field insulating film by the relatively thick gate insulating film that covers an end region of the field insulating film in the active region of the second MOS transistor, the relatively thick gate insulating film completely surrounding the source region, the channel region, and the drain region, the gate electrode overlying the relatively thick gate insulating film at opposite sides of the gate electrode,
the bird's beak region comprising a portion of the end region of the field insulating film extending along the active region toward the channel region.
4. A semiconductor device according to claim 1 , wherein in the second MOS transistor, the gate electrode is spaced apart from the field insulating film and an inversion-preventing diffusion layer having relatively high concentration resides below the field insulating film.