Dielectric layer for an electronic device
View Patent ↗A dielectric layer for an electronic device, such as a thin-film transistor, is provided. The dielectric layer comprises a molecular glass. The resulting dielectric layer is very thin, pure, and stable. Processes and compositions for fabricating such a dielectric layer are also disclosed.
1. A thin film transistor comprising a dielectric layer, a gate electrode, a source electrode, and a drain electrode;
wherein the dielectric layer separates the gate electrode from the source electrode and the drain electrode; and
wherein the dielectric layer comprises a molecular glass.
2. The thin film transistor of claim 1 , wherein the molecular glass has a linear, T-type, tripodal, or tetrahedral structure.
3. The thin film transistor of claim 2 , wherein the molecular glass comprises one or more functional groups selected from the group consisting of hydroxyl, amino, isocyanate, carboxylic acid, ester, alkoxy, and epoxy functional groups.
4. The thin film transistor of claim 1 , wherein the molecular glass is selected from the group consisting of phenolic molecular glass, amino molecular glass, carboxylic acid molecular glass, epoxy molecular glass, methoxy molecular glass, ester molecular glass, and isocyanate molecular glass.
5. The thin film transistor of claim 1 , wherein the molecular glass is a derivative of a compound selected from the group consisting of a spiro compound, a bisphenol-A compound, a tetrahedral aryl silane compound, an adamantane compound, a cyclic compound, and a triaryl amine compound.
6. The thin film transistor of claim 1 , wherein the molecular glass has a glass transition temperature of from about 25 degrees C. to about 350 degrees C.
7. The thin film transistor of claim 1 , wherein the molecular glass has a molecular weight of from about 200 to about 5000.
8. The thin film transistor of claim 1 , wherein the molecular glass is further crosslinked with itself or with a crosslinking agent.
9. The thin film transistor of claim 8 , wherein the crosslinking agent is 1,3,4,6-tetrakis(methoxylmethyl)glycoluril, a melamine-formaldehyde resin, or a phenol-formaldehyde resin.
10. The thin film transistor of claim 1 , wherein the molecular glass comprises a bisphenol-A derivative selected from one of Formula (3) to Formula (8):
wherein each R is independently selected from the group consisting of hydrogen, hydroxyl, protected hydroxyl, amino, —OC 2 H 5 , —OCH 3 , —OCOOC 4 H 9 , —CNO, hydroxyphenyl, —COON, and epoxy.
11. The thin film transistor of claim 1 , wherein the molecular glass comprises a tetrahedral silane of Formula (9):
wherein each R is independently selected from the group consisting of hydrogen, hydroxyl, protected hydroxyl, amino, —OC 2 H 5 , —OCH 3 , —OCOOC 4 H 9 , —CNO, hydroxyphenyl, —COON, and epoxy.
12. The thin film transistor of claim 1 , wherein the molecular glass comprises an adamantane of Formula (10):
wherein each R is independently hydrogen or a substituent comprising a heteroatom.
13. The thin film transistor of claim 1 , wherein the molecular glass comprises a cyclic system selected from one of Formula (11) to Formula (14):
wherein each R is independently selected from the group consisting of hydrogen, hydroxyl, protected hydroxyl, amino, —OC 2 H 5 , —OCH 3 , —OCOOC 4 H 9 , —CNO, hydroxyphenyl, —COOH, and epoxy; and R 1 is a phenyl group substituted with an oxygen-containing radical.
14. The thin film transistor of claim 1 , wherein the molecular glass comprises a triarylamine derivative selected from one of Formula (15) to Formula (17):
wherein each R is independently selected from the group consisting of hydrogen, hydroxyl, protected hydroxyl, amino, -OC 2 H 5 , —OCH 3 , —OCOOC 4 H 9 , —CNO, hydroxyphenyl, —COOH, and epoxy.
15. The thin film transistor of claim 1 , wherein the molecular glass is selected from the group consisting of 4,4′-(1,4-phenylenediisopropylidene)bisphenol, tetrakis(4-hydroxyphenyl)silane, tetrakis(3-hydroxyphenyl)silane, tetrakis(2-hydroxyphenyl)silane; tetrakis(4-hydroxybiphenyl)silane, tetrakis(3-[3-hydroxybiphenyl])silane, tetrakis(4-[3-hydroxybiphenyl])silane, tetrakis(3-[4-hydroxybiphenyl])silane, tetrakis(4-[4-hydroxybiphenyl])silane, tetrakis(3-methoxyphenyl)silane, tetrakis(4-methoxyphenyl)silane, tetrakis(3-[3-methoxybiphenyl])silane, tetrakis(4-[3-methoxybiphenyl])silane, tetrakis(3-[4-methoxybiphenyl])silane, tetrakis(4-[4-methoxybiphenyl])silane, tri(2-adamantyloxymethyl cholate)-3-yl adamantan-1,3,5-tricarboxylate, tri{[(2-methyl-2-adamantyl)oxy]carbonylmethylcholate}-3-yl-adamantan -1,3,5-tricarboxylate, adamantane-1,3,5-triyltris(oxymethylene) tricholate, adamantane -1,3,5-triyltris(oxymethylene) tri-3-(2-adamantyloxymethoxy)cholate, tri(2-methyl-2-adamantyl) adamantan-1,3,5-tricarboxylate, 1,3,4-tri[(2-adamantyloxymethyl cholate)-3-oxymethyloxy]adamantane, 1,2,3,4,6-penta-O-(2-adamanthyloxymethyl)-alpha-D -glucose, 1,2,3,4,6-penta-O-{[(2-methyl-2-adamantyl)oxy]carbonylmethyl}-alpha-D -glucose, and structures (a) through (e):
16. The thin film transistor of claim 1 , wherein the dielectric layer is formed from a solution comprising:
the molecular glass;
a crosslinking agent; and
an optional catalyst.
17. The thin film transistor of claim 16 , wherein the catalyst is an acid.