Granted Patent B2

US 9,356,248 · App. 13/969,293 · Granted May 31, 2016

Abstract

Claims (19)

1. An n-type organic thin-film transistor, comprising:

a substrate;

a source;

a drain,

wherein the source and the drain are disposed on top of the substrate;

a semiconductor-insulator polymer blend layer layered on the substrate, covering the source and drain, wherein the semiconductor-insulator polymer blend layer comprises a mixture of n-type perylene derivatives and an insulating polymer;

a dielectric layer disposed on the semiconductor-insulator blend layer; and

a gate layered on the dielectric layer.

2. The n-type organic thin-film transistor of claim 1 , wherein the insulating polymer is one of poly(α-methyl styrene), polyethylene, or polymethylmethacrylate.

3. The n-type organic thin-film transistor of claim 2 , wherein the insulating polymer is poly(α-methyl styrene).

4. The n-type organic thin-film transistor of claim 1 , wherein the mixture is in a ratio of 2:1.

5. The n-type organic thin-film transistor of claim 1 , wherein the mixture is in a ratio of 3:1.

6. The n-type organic thin-film transistor of claim 1 , wherein the mixture is in a ratio of 1:1.

7. The n-type organic thin-film transistor of claim 1 , wherein the source and the drain are doped with a contact dopant.

8. The n-type organic thin-film transistor of claim 1 , wherein a threshold voltage is 12V.

9. The n-type organic thin-film transistor of claim 7 , wherein a threshold voltage is 8V.

10. The n-type organic thin-film transistor of claim 1 , wherein an on/off ratio is 10 3 for a voltage range of 0V to 20V.

11. The n-type organic thin-film transistor of claim 7 , wherein the contact dopant is cesium salt.

12. The n-type organic thin-film transistor of claim 7 , wherein the contact dopant is a polyelectrolyte.

Assignments (9)