Transparent Conductive Structure, Device comprising the same, and the Manufacturing Method thereof
An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting device and the transparent conductive structure comprises a transparent conductive oxide layer and a passivation layer on the transparent conductive oxide layer. The material of the transparent conductive oxide layer comprises transparent conductive metal oxide, such as ZnO. Furthermore, the transparent conductive metal oxide also comprises impurities, such as a carrier e.g. gallium.
1 . An optical electrical device, comprising:
a base;
a first transparent conductive layer comprising a first metal oxide having a first metal element and a fourth metal element on the base;
a second transparent conductive layer comprising a second metal oxide having a second metal element and a third metal element on the first transparent conductive layer; and
a passivation layer comprising a dielectric material on the second transparent conductive layer,
wherein the first metal element is different from the second element.
2 . The optical electrical device to claim 1 , wherein a mole fraction of the fourth metal element is greater than that of the first metal element in the first metal oxide.
3 . The optical electrical device to claim 1 , wherein a mole fraction of the second metal element is greater than that of the third metal element in the second metal oxide.
4 . The optical electrical device to claim 1 , wherein a mole fraction of the first metal element in the first metal oxide is less than 15%.
5 . The optical electrical device to claim 1 , wherein a valence state of the first metal element is different from that of the second metal element.
6 . The optical electrical device to claim 1 , wherein a valence state difference between the first metal element and the second metal element is two.
7 . The optical electrical device to claim 6 , wherein the first metal is in group IVA.
8 . The optical electrical device to claim 1 , wherein the second metal element and the third metal element belong to groups directly next to each other in a standard periodic table.
9 . The optical electrical device to claim 1 , wherein the third metal element is trivalent.
10 . The optical electrical device to claim 1 , wherein the third metal element and the fourth metal element are different elements of a same group in a standard periodic table.
11 . The optical electrical device to claim 10 , wherein the same group is group IIIA.
12 . The optical electrical device to claim 1 , wherein a mole fraction of the third metal element in the second metal oxide is less than 10%.
13 . The optical electrical device to claim 1 , wherein the dielectric material comprises aluminum oxide or silicon oxide.
14 . The optical electrical device to claim 1 , wherein resistivities of the first transparent conductive layer and the second transparent conductive layer are both less than 3.3×10 −4 Ω-cm.
15 . The optical electrical device to claim 1 , wherein the base comprises a light-emitting semiconductor stack configured to emit an incoherent light, wherein the light-emitting semiconductor stack comprises an n-type semiconductor layer, a p-type semiconductor layer, and an active layer between the n-type semiconductor layer and the p-type semiconductor layer.
16 . The optical electrical device to claim 15 , wherein the p-type semiconductor layer comprises a plurality of hexagonal-pyramid cavities.
17 . The optical electrical device to claim 1 , wherein a transmittance of the second transparent conductive layer is larger than 95% for a light with a dominant wavelength between 450 nm and 550 nm.
18 . The optical electrical device to claim 1 , further comprising a recess formed in the passivation layer.
19 . The optical electrical device to claim 18 , further comprising an electrode pad formed in the recess.
20 . The optical electrical device to claim 1 , wherein a mole fraction of the first metal element in the first metal oxide is larger than that of the third metal element in the second metal oxide.