Light-emitting device
View Patent ↗A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.
1. A light-emitting device, comprising:
a substrate; and
an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well, and the second quantum well;
wherein the barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well, and a second region disposed between the first region and the third region and comprising Sb, wherein at least one of the first region and the third region comprises a lower concentration of Sb than the second region.
2. The light-emitting device according to claim 1 , wherein the barrier layer is a single layer.
3. The light-emitting device according to claim 1 , wherein the second region has a thickness d, the barrier layer has a thickness D, and d/D is between 0.2-0.64.
4. The light-emitting device according to claim 1 , wherein the first region includes AlGaInP and the second region includes AlGaInPSb.
5. The light-emitting device according to claim 4 , wherein a content ratio of Sb to P in the second region is less than 1/10000.
6. The light-emitting device according to claim 1 , wherein a concentration of Sb is between 10 17 −10 20 cm −3 .
7. The light-emitting device according to claim 1 , wherein at least one of the first region and the third region is devoid of Sb.
8. A light-emitting device, comprising:
a substrate;
an active layer formed on the substrate and comprising Sb; and
a temperature coefficient (Tc) which is between −0.6%˜−0.75%;
wherein the temperature coefficient (Tc)={[(L 2 ×100)/L 1 ]−100}/(T 2 −T 1 ),
wherein the light-emitting device has a first luminance (L 1 ) at a first temperature (T 1 ) and a second luminance (L 2 ) at a second temperature(T 2 ).
9. The light-emitting device according to claim 8 , wherein the active layer comprises a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well.
10. The light-emitting device according to claim 9 , wherein the barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well, and a second region disposed between the first region and the third region and comprising Sb.
11. The light-emitting device according to claim 9 , wherein a thickness of the barrier layer is between 50Ř250Å.
12. The light-emitting device according to claim 8 , wherein a material of the active layer comprises AlGaAs, AlInGaP, InGaP, or AlInP.
13. The light-emitting device according to claim 8 , wherein the second temperature is higher than the first temperature and the second luminance is less than the first luminance.
14. The light-emitting device according to claim 8 , wherein the first temperature is between 20-40° C. and the second temperature is between 50-100° C.