Semiconductor device manufacturing method

1. A semiconductor device manufacturing method, comprising:

depositing a silicon film above a semiconductor substrate;

forming an insulating film, which includes silicon oxide or silicon nitride, on the silicon film;

forming a physical guide, having at least one depressed portion, above the insulating film;

forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide;

phase-separating the directed self-assembly material layer into a first region including the first polymer and a second region including the second polymer, the second region having a cylindrical shape, and the first region surrounding a side surface and a bottom surface of the second region;

removing the second region;

processing the insulating film using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film; and

processing the silicon film using the processed insulating film as a mask.

2. The method according to claim 1 , further comprising:

transferring the pattern to a plurality of alternately layered first and second films formed on the substrate.

3. The method according to claim 1 , wherein the silicon film is formed in a chamber, and the insulating film including silicon oxide is formed by exposing the silicon film to air.

4. The method according to claim 1 , wherein the insulating film including silicon oxide is formed by thermal oxidation of a surface of the silicon film.

5. The method according to claim 1 , wherein the insulating film including silicon nitride is formed by thermal nitridation of a surface of the silicon film.

6. The method according to claim 1 , wherein the silicon film is processed using a reactive ion etching process in the presence of a gas comprising HBr and O 2 , at a pressure equal to or less than 15 mT, and an ion energy equal to or less than 300 eV.

7. A semiconductor device manufacturing method, comprising:

depositing a silicon film above a semiconductor substrate;

forming an insulating film, which includes silicon oxide or silicon nitride, on the silicon film;

forming a physical guide having a depressed portion above the insulating film;

forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide;

phase-separating the directed self-assembly material layer into a first region including the first polymer and a second region including the second polymer, the second region having a cylindrical shape, and the first region surrounding a side surface and a bottom surface of the second region;

removing the second region;

processing the insulating film using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film; and

processing the silicon film using the processed insulating film, the physical guide, and the first region as masks.

8. The method according to claim 7 , further comprising:

transferring the pattern to a plurality of alternately layered first and second films formed on the substrate.

9. The method according to claim 7 , wherein the silicon film is formed in a chamber, and the insulating film including silicon oxide is formed by exposing the silicon film to air.

10. The method according to claim 7 , wherein the insulating film including silicon oxide is formed by thermal oxidation of a surface of the silicon film.

11. The method according to claim 7 , wherein the insulating film including silicon nitride is formed by thermal nitridation of a surface of the silicon film.

12. The method according to claim 7 , wherein the silicon film is processed using a reactive ion etching process in the presence of a gas comprising HBr and O 2 , at a pressure equal to or less than 15 mT, and an ion energy equal to or less than 300 eV.

13. A semiconductor device manufacturing method, comprising:

depositing a plurality of first films alternately layered with a plurality of second films to form a layered film stack above a semiconductor substrate;

forming an organic film above the layered film stack;

depositing a silicon film above the organic film in a chamber;

forming a silicon oxide film on the silicon film by removing the semiconductor substrate from the chamber and exposing the silicon film to air;

forming a physical guide above the silicon oxide film, the physical guide having one or more depressed portions;

forming a directed self-assembly material layer including a first polymer and a second polymer in the depressed portions of the physical guide;

phase-separating the directed self-assembly material layer into a first region including the first polymer and a second region including the second polymer;

removing the second region;

processing the silicon oxide film using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the silicon oxide film; and

processing the silicon film by performing a reactive ion etching process using the processed silicon oxide film, the physical guide, and the first region as masks,

wherein the second region has a cylinder shape, and the first region surrounds a side surface and a bottom surface of the second region.

14. The method according to claim 13 , further comprising:

transferring the pattern to the layered film stack.

15. The method according to claim 13 , further comprising:

removing the first region located under the bottom surface of the second region after removing the second region.

16. The method according to claim 13 , wherein a gas comprising HBr and O 2 is provided to a process chamber during the reactive ion etching process.

17. The method according to claim 16 , wherein a pressure equal to or less than 15 mT is maintained in the process chamber during the reactive ion etching process.

18. The method according to claim 16 , wherein an ion energy equal to or less than 300 eV is used during the reactive ion etching process.