IP Library Granted Patent US 9,520,146
Granted Patent B1
US 9,520,146 · App. 13/972,002 · Granted Dec 13, 2016

Method of forming a fully wrapped-around shielded PMR writer pole

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Quick Facts
Patent No.
US 9,520,146
App. No.
13/972,002
Granted
Dec 13, 2016
Kind
B1
Abstract

A method of forming a wrapped-around shielded perpendicular magnetic recording writer pole is disclosed. A structure comprising a leading shield layer and an intermediate layer disposed over the leading shield layer is provided, the intermediate layer comprising a pole material and a dielectric material. A trench is formed in the dielectric material. A non-magnetic layer in the trench is removed via an ion beam etching process. A seed layer is deposited in the trench and over the pole material. A magnetic material comprising a side shield layer is deposited on at least a portion of the seed layer.

Claims (23)

1. A method of forming a wrapped-around shielded perpendicular magnetic recording writer pole, the method comprising:

providing a structure comprising a leading shield layer and an intermediate layer disposed over the leading shield layer, the intermediate layer comprising a pole material and a dielectric material;

forming a trench in the dielectric material by forming a first patterned mask layer having a first patterned opening over the intermediate layer, and removing a portion of the dielectric material below the first patterned opening, wherein a non-magnetic layer is formed in the trench during formation of the trench, the non-magnetic layer comprising an oxidized portion of a top surface of the leading shield layer;

removing the non-magnetic layer in the trench via an ion beam etching process;

depositing a seed layer in the trench and over the pole material; and

depositing a magnetic material comprising a side shield layer on at least a portion of the seed layer.

2. The method of claim 1 , wherein the portion of the dielectric material is removed via a wet etching process.

3. The method of claim 1 , wherein the non-magnetic layer further comprises a photoresist residue.

4. The method of claim 1 , wherein the seed layer is deposited over an entire wafer comprising the structure.

5. A method of forming a wrapped-around shielded perpendicular magnetic recording writer pole, the method comprising:

providing a structure comprising a leading shield layer and an intermediate layer disposed over the leading shield layer, the intermediate layer comprising a pole material and a dielectric material;

forming a trench in the dielectric material, wherein a non-magnetic layer is formed in the trench during formation of the trench;

removing the non-magnetic layer in the trench via an ion beam etching process;

depositing a seed layer in the trench and over the pole material; and

depositing a magnetic material comprising a side shield layer on at least a portion of the seed layer,

wherein the structure is tilted during the ion beam etching process.

6. The method of claim 5 further comprising forming a second patterned mask having a second patterned opening over a region of the dielectric material and over a region of the leading shield layer, wherein the magnetic material is deposited via the second patterned opening of the second patterned mask.

7. The method of claim 6 , wherein the seed layer is deposited via a chemical vapor deposition (CVD) process.

8. The method of claim 6 , wherein the seed layer is deposited via a physical vapor deposition (PVD) process.

9. The method of claim 8 , wherein the PVD process is an ion beam deposition process.

10. The method of claim 9 , wherein the structure is tilted during the ion beam deposition process.

11. The method of claim 10 , wherein the ion beam etching process is performed on the structure in a first vacuum chamber, and the ion beam deposition process is performed on the structure in a second vacuum chamber after the structure has been transferred from the first vacuum chamber to the second vacuum chamber.

12. The method of claim 11 , wherein the structure is maintained substantially in a vacuum condition while the structure is transferred from the first vacuum chamber to the second vacuum chamber.

Assignments (8)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 038710 FRAME 0845 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL (FREMONT), LLC; WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0445 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2019
From: WESTERN DIGITAL (FREMONT), LLC
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 050450/0582 →
RELEASE OF SECURITY INTEREST Recorded Mar 5, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WESTERN DIGITAL (FREMONT), LLC
Reel/Frame 045501/0158 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038710/0845 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038744/0675 →
SECURITY AGREEMENT Recorded May 16, 2016
From: WESTERN DIGITAL (FREMONT), LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038744/0755 →