Solid-state image pickup element, method of manufacturing the same, and electronic apparatus
View Patent ↗A solid-state imaging device, including a semiconductor substrate; a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon; an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region; a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region; a light blocking film over an upper surface of the transfer gate; and an insulating layer over the substrate and between the semiconductor substrate and the light blocking film, wherein, a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region.
1. A solid-state imaging device, comprising:
a semiconductor substrate;
a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon;
an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region;
a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region;
a light blocking film over an upper surface of the transfer gate; and
an insulating layer over the substrate and between the semiconductor substrate and the light blocking film,
wherein,
a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region.
2. The solid-state imaging device of claim 1 , wherein the light blocking film overlies the charge holding region.
3. The solid-state imaging device of claim 1 , further comprising a charge discharging portion that operative to discharge electric charges from the photoelectric conversion region.
4. The solid-state imaging device of claim 3 , wherein the charge discharging portion is at an upper surface of the semiconductor substrate.
5. The solid-state imaging device of claim 1 , wherein the semiconductor substrate includes a p-type well, and the charge holding portion comprises an n-type region within the p-type well.
6. The solid-state imaging device of claim 1 , comprising a thermal oxide layer between the insulating layer and the semiconductor substrate.
7. The solid-state imaging device of claim 1 , wherein the light blocking layer comprises tungsten oxide.
8. The solid-state imaging device of claim 1 , wherein the photoelectric conversion region comprises a photodiode.
9. The solid-state imaging device of claim 1 , further comprising a floating diffusion region in the semiconductor substrate and a second transfer gate that effects transfer of electric charges from the electric charge holding region to the floating diffusion region.
10. The solid-state imaging device of claim 9 , wherein the light blocking film overlies the floating diffusion region and the electric charge holding region.
11. The solid-state imaging device of claim 1 , wherein the insulating film has a three layer structure in which a nitride film is sandwiched between a first oxide film and a second oxide film.
12. A solid-state imaging device, comprising:
a semiconductor substrate;
a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon;
an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region;
a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region;
a light blocking film over an upper surface of the transfer gate; and
an insulating layer over the substrate and between the semiconductor substrate and the light blocking film,
wherein,
a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region,
the light blocking film overlies the charge holding region, and
the semiconductor substrate includes a p-type well, and the charge holding portion comprises an n-type region within the p-type well.
13. The solid-state imaging device of claim 12 , further comprising a charge discharging portion that operative to discharge electric charges from the photoelectric conversion region.
14. The solid-state imaging device of claim 12 , comprising a thermal oxide layer between the insulating layer and the semiconductor substrate.
15. The solid-state imaging device of claim 12 , further comprising a floating diffusion region in the semiconductor substrate and a second transfer gate that effects transfer of electric charges from the electric charge holding region to the floating diffusion region, wherein, the light blocking film overlies the floating diffusion region and the electric charge holding region.
16. A solid-state imaging device, comprising:
a semiconductor substrate;
a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon;
an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region;
a first transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region,
a floating diffusion region in the semiconductor substrate,
a second transfer gate that effects transfer of electric charges from the electric charge holding region to the floating diffusion region;
a light blocking film over an upper surface of the transfer gate; and
an insulating layer over the substrate and between the semiconductor substrate and the light blocking film,
wherein,
a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region,
the light blocking film overlies the electric charge holding region and the floating diffusion region.
17. The solid-state imaging device of claim 16 , wherein the semiconductor substrate includes a p-type well, and the charge holding region comprises an n-type region within the p-type well.
18. The solid-state imaging device of claim 16 , wherein the insulating layer has a three layer structure in which a nitride film is sandwiched between a first oxide film and a second oxide film.
19. The solid-state imaging device of claim 16 , wherein the light blocking film comprises tungsten oxide.