Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

1. A solid-state imaging device comprising: a substrate with a plurality of pixels; a plurality of charge accumulation regions in the substrate respectively corresponding to the pixels; for each pixel, a pixel electrode on the substrate and over the respective charge accumulation region, the pixel electrode electrically coupled to the respective charge accumulation region; for each pixel, a first electrode carried on the substrate that is separated from the respective pixel electrode by an insulation film and that is electrically connected to the respective pixel electrode by a plug disposed in the insulation film, the first electrodes positioned in a common layer; a second electrode disposed opposed to the first electrodes; a photoelectric conversion layer common to all of the pixels, which is disposed between the first electrodes and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a single conductive layer, the photoelectric conversion layer effective to convert incident light into electrical charges suitable for generating an image signal.

2. The solid-state imaging device according to claim 1 , wherein the narrow gap semiconductor quantum dots have a band gap of 1 eV or less.

3. The solid-state imaging device according to claim 1 , wherein the narrow gap semiconductor quantum dots are selected from a lead selenium compound, a lead sulfur compound, a lead tellurium compound, a cadmium selenium compound, a cadmium selenium compound, a cadmium tellurium compound, an indium antimony compound, and an indium arsenic compound.

4. The solid-state imaging device according to claim 1 , wherein the single conductive layer comprises poly2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene.

5. The solid-state imaging device according to claim 1 , wherein: the first electrodes are metal electrodes, the metal electrodes have a work function smaller than the work function of the single conductive layer, and the Fermi level of the metal electrodes is higher than the HOMO level of the single conductive layer or the energy level of the valence band.

6. The solid-state imaging device according to claim 5 , wherein: the metal electrodes are made of lithium fluoride or calcium, and the second electrode is made of indium tin oxide.

7. The solid-state imaging device according to claim 1 , wherein each pixel has a condenser lens disposed on the light-incident side of the pixel.

8. The solid-state imaging device according to claim 1 , wherein: the first electrodes have a work function smaller than that of the single conductive layer; and the first electrodes have a Fermi level higher than a valance band energy level of the single conductive layer.

9. The solid-state imaging device according to claim 1 , wherein each pixel is comprised of a respective first electrode, a portion of the photoelectric conversion layer, and the second electrode.

10. The solid-state imaging device according to claim 1 , wherein for each pixel, a color filter is provided over the respective charge accumulation region.

11. The solid-state imaging device according to claim 1 , wherein the first electrodes are transparent electrodes and the second electrode is a transparent electrode or is a metal electrode, or the second electrode is a transparent electrode and the first electrodes are transparent electrodes or metal electrodes.

12. The solid-state imaging device according to claim 1 , wherein one electrode of the first electrode and the second electrode is a transparent electrode and the other electrode is a metal electrode or a transparent electrode.

13. The solid-state imaging device according to claim 1 , wherein the narrow gap semiconductor quantum dots are dispersed throughout a depth of the single conductive layer.

14. The solid-state imaging device according to claim 1 , wherein the dispersion of the narrow gap semiconductor quantum dots is based on a chemical synthesis and a spin coating.

15. The solid-state imaging device according to claim 1 , wherein the narrow gap semiconductor quantum dots are dispersed throughout a depth of the single conductive layer and the dispersion of the narrow gap semiconductor quantum dots is based on a chemical synthesis and spin coating.

16. A solid-state imaging device comprising: a first electrode; a second electrode disposed opposed to the first electrode; a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a single conductive layer; a pixel electrode, wherein the pixel electrode is separated from the first electrode by an insulation film, and wherein the pixel electrode is electrically connected to the first electrode by a plug that extends through the insulation film.

17. The solid-state imaging device according to claim 1 , wherein one electrode of the first electrode and the second electrode is a transparent electrode and the other electrode is a metal electrode or a transparent electrode.

18. A method for manufacturing a solid-state imaging device, the method comprising the steps of: forming a charge accumulation layer on a silicon substrate; forming a pixel electrode on the charge accumulation layer; forming an insulating film covering the pixel electrode; forming a plug, which is connected to the pixel electrode, in the insulating film; forming a first electrode, which is connected to the plug, on the insulating film; forming a photoelectric conversion layer having a single conductive layer in which narrow gap semiconductor quantum dots are dispersed; and forming a second electrode on the photoelectric conversion layer.