Power semiconductor device and method for manufacturing such a power semiconductor device

1. An insulated gate bipolar device with a gate electrode, the gate electrode being arranged on an emitter side, which device comprises:

an active cell with layers of different conductivity types in an order between an emitter electrode on the emitter side and a collector electrode on a collector side opposite to the emitter side as follows:

a source region of a first conductivity type;

a base layer of a second conductivity type, which contacts the emitter electrode in a contact area;

an enhancement layer of the first conductivity type having high doping concentration;

a compensation layer of the second conductivity type arranged between the enhancement layer and a drift layer, which has a compensation layer thickness t p , which is a maximum thickness of the compensation layer in a plane perpendicular to the emitter side;

the drift layer of the first conductivity type having lower doping concentration than the enhancement layer, wherein the enhancement layer separates the base layer from the drift layer; and

a collector layer of the second conductivity type;

wherein the compensation layer is arranged in a projection of the contact area between the enhancement layer and the drift layer, such that a channel between the enhancement layer and the drift layer is maintained;

wherein the compensation layer floats relative to the base layer such that the compensation layer does not extend into an area outside the projection of the contact area; and

wherein the enhancement layer has an enhancement layer thickness t n , which is measured in a same plane as the compensation layer thickness, with:

N p t p =kN n t n ,

wherein N n is a doping concentration of the enhancement layer;

wherein N p is the doping concentration of the compensation layer; and

wherein k is a factor between 0.67 and 1.5.

2. The bipolar device according to claim 1 , comprising:

a buffer layer of the first conductivity type having higher doping concentration than the drift layer, which buffer layer is arranged between the drift layer and the collector layer.

3. The bipolar device according to claim 1 , wherein a maximum doping concentration of the enhancement layer is at least 1*10 16 cm −3 .

4. The bipolar device according to claim 1 , wherein a maximum doping concentration of the enhancement layer is at least 2*10 16 cm −3 .

5. The bipolar device according to claim 1 , wherein a maximum doping concentration of the enhancement layer is 1*10 17 cm −3 .

6. The bipolar device according to claim 1 , wherein compensation layer thickness is between 0.1 and 10 μm.

7. The bipolar device according to claim 1 , wherein k is between 0.8 and 1.2.

8. The bipolar device according to claim 1 , wherein k is between 0.9 and 1.1.

9. The bipolar device according to claim 1 , wherein k is between 0.95 and 1.05.

10. The bipolar device according to claim 1 , wherein the gate electrode is one of a trench gate electrode and a planar gate electrode.

11. The bipolar device according to claim 1 , wherein the compensation layer does not extend into an area outside the projection of the contact area.

12. The bipolar device according to claim 1 , wherein the bipolar device comprises: at least two active cells.

13. The bipolar device according to claim 1 , wherein the compensation layer thickness t p is arranged in a center of the contact area.

14. The bipolar device according to claim 1 , wherein the bipolar device is formed on a wafer made of silicon or GaN or SiC.

15. The bipolar device according to claim 1 , wherein the enhancement layer comprises:

in a first depth a continuous part and in a second depth, which is greater than the first depth, another part, in which the enhancement layer alternates with the compensation layer, the first and second depths being measured from the emitter side.

16. The bipolar device according to claim 1 , wherein compensation layer thickness is between 0.5 and 5 μm.

17. The bipolar device according to claim 2 , wherein a maximum doping concentration of the enhancement layer is at least 1*10 16 cm −3 .

18. The bipolar device according to claim 17 , wherein a maximum doping concentration of the enhancement layer is at least 2*10 16 cm −3 .

19. The bipolar device according to claim 18 , wherein a maximum doping concentration of the enhancement layer is 1*10 17 cm −3 .

20. The bipolar device according to claim 19 , wherein compensation layer thickness is between 0.1 and 10 μm.