Print processing for patterned conductor, semiconductor and dielectric materials
View Patent ↗Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.
1. A composition, comprising:
a) one or more compounds selected from the group consisting of (poly)silanes, (poly)germanes, and (poly)germasilanes in an amount of from 1 to 40% by weight, wherein at least 75 mol % of said (poly)silanes, (poly)germanes, and (poly)germasilanes consist essentially of species having (i) from 15 to about 1,000,000 silicon and/or germanium atoms and (ii) hydrogen, and said (poly)silanes, (poly)germanes, and (poly)germasilanes are prepared by catalytic polymerization and subsequent removal of catalyst from said (poly)silanes, (poly)germanes, and (poly)germasilanes; and
b) a solvent in which the one or more compounds is soluble, wherein the composition has a viscosity of from 2 to 100 cP.
2. The composition of claim 1 , wherein said viscosity is from 2 to 15 cP.
3. The composition of claim 1 , consisting essentially of said (poly)silane(s) and said solvent.
4. The composition of claim 1 , wherein said solvent comprises a C 5 -C 12 linear or branched alkane, a C 5 -C 10 mono- or bicycloalkane, or a C 5 -C 10 mono- or bicycloalkane substituted by up to 3 C 1 -C 4 alkyl groups.
5. The composition of claim 1 , wherein the composition is in a liquid phase at ambient temperatures.
6. The composition of claim 1 , wherein the removal of catalyst from said (poly)silanes, (poly)germanes, and (poly)germasilanes comprises washing said (poly)silanes, (poly)germanes, and (poly)germasilanes with a fluid comprising an immiscible polar solvent.
7. The composition of claim 1 , wherein the removal of catalyst from said (poly)silanes, (poly)germanes, and (poly)germasilanes comprises washing said (poly)silanes, (poly)germanes, and (poly)germasilanes with a fluid comprising water.
8. A method of forming a patterned material on a substrate, comprising:
a) printing the composition of claim 1 in a pattern on the substrate;
b) substantially evaporating the solvent to form the feature comprising the precursor or a higher molecular weight or more insoluble derivative thereof; and
c) converting said precursor or higher molecular weight or more insoluble derivative thereof to said patterned material.
9. The method of claim 8 , wherein said composition has a mass loading of 1-40% of said one or more compounds.
10. The method of claim 8 , wherein at least 75 mol % of said compound consists essentially of species having at least 15 silicon and/or germanium atoms and hydrogen.
11. The method of claim 8 , wherein said solvent comprises a C 5 -C 10 alkane or a C 5 -C 10 mono- or bicycloalkane, either of which may be substituted by up to 3 C 1 -C 4 alkyl groups.
12. The method of claim 8 , further comprising irradiating said composition with UV radiation during or immediately after printing.
13. The method of claim 12 , wherein irradiating said composition is performed within about 0.1 to about 10 seconds of printing.
14. The method of claim 8 , wherein printing is performed in an inert atmosphere.
15. The method of claim 8 , wherein printing is performed in an ambient or oxidizing atmosphere.
16. The method of claim 8 , wherein converting said compound or a higher molecular weight or more insoluble derivative thereof to said patterned material comprises curing in an inert atmosphere.
17. The method of claim 8 , wherein converting said compound or a higher molecular weight or more insoluble derivative thereof to said patterned material comprises curing in an ambient or oxidizing atmosphere.
18. A pattern on a substrate, the pattern having one or more solid features consisting essentially of one or more Group IVA elements selected from the group consisting of silicon and germanium, formed from the composition of claim 1 .
19. The pattern of claim 18 , wherein the pattern includes silicon.
20. The pattern of claim 18 , wherein the pattern comprises features that have rounded corners in a top-down view.
21. The pattern of claim 18 , wherein the one or more solid features comprises a film that consists essentially of said one or more Group IVA elements and less than 0.05 atom % oxygen.
22. The pattern of claim 18 , wherein the one or more solid features comprises a film that consists essentially of said one or more Group IVA elements and less than 0.05 atom % carbon.