Lateral semiconductor device and manufacturing method for the same
View Patent ↗A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.
1. A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising:
forming a first trench by etching a portion of a LOCOS oxide, the LOCOS oxide having been formed at a surface portion of the drift region, a portion of the LOCOS oxide extending in a thickness direction to a predetermined depth beneath the surface of the drift region, the first trench extending from a surface of the LOCOS oxide through the entire thickness of the LOCOS oxide to reach a position corresponding to the predetermined depth beneath the surface of the drift region, and then
simultaneously forming a second trench extending from a portion of the surface of the drift region not covered by LOCOS oxide toward the buried oxide layer by etching, while extending the first trench by continuing etching of the first trench toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the first trench reaches the buried oxide layer.