Thermoelectric conversion element and producing method thereof
View Patent ↗The invention provides a thermoelectric conversion element having a lot of pn junction pairs per unit area and having a thermoelectric material chip which is hardly broken, and a producing method thereof. In the thermoelectric conversion element of the invention, plural substrates in each of which a film-shaped thermoelectric material is formed in a surface thereof are disposed. As a result, because the number of pn junction pairs per unit area is increased, a high output can be obtained. Because the thermoelectric material is formed into the film shape, reliability degradation caused by a breakage of the thermoelectric material can be prevented, even in the thermoelectric material having many pn junction pairs per unit area, namely, a sectional area is small.
1. A thermoelectric conversion element comprising:
first substrates having p-type thermoelectric material layers formed on p-substrates;
second substrates having n-type thermoelectric material layers formed on n-substrates; and
conductive materials connecting adjacent layers of the p-type thermoelectric material layers and the n-type thermoelectric material layers;
wherein the first substrates and the second substrates are alternately disposed such that the p-substrates and the n-substrates are disposed between adjacent layers of the p-type thermoelectric material layers and n-type thermoelectric material layers;
the p-substrates and the n-substrates have contact holes respectively provided in the p-substrates and the n-substrates such that the contact holes appear at ends of the p-substrate and n-substrate, in a direction perpendicular to a direction of arrangement of the p-type thermoelectric material layers and the n-type thermoelectric material layers; and
the conductive materials are disposed in the contact holes and penetrate through the p-type thermoelectric layers or the n-type thermoelectric material layers.
2. The thermoelectric conversion element according to claim 1 , further comprising high heat-transfer films between adjacent pairs of the p-substrates and the p-type thermoelectric material layers.
3. The thermoelectric conversion element according to claim 1 , further comprising high heat-transfer films between adjacent pairs of the n-substrates and the n-type thermoelectric material layers.
4. The thermoelectric conversion element according to claim 1 , wherein
the p-type thermoelectric material layers are divided into two or more individual segments formed on the p-substrates, and
the n-type thermoelectric material layers are divided into two or more individual segments formed on the n-substrates.
5. The thermoelectric conversion element according to claim 1 , wherein both of the p-type thermoelectric material layers and the n-type thermoelectric material layers on the p-substrates and the n-substrates are divided into two or more individual segments, respectively.
6. The thermoelectric conversion element according to claim 1 , wherein:
each of the conductive materials includes a projection projecting from the contact holes along the direction of arrangement of the p-type thermoelectric material layers and the n-type thermoelectric material layers; and
the projection creates a gap between adjacent pairs of the p-type thermoelectric material layers and the n-substrates or a gap between adjacent pairs of the n-type thermoelectric material layers and the p-substrates.
7. The thermoelectric conversion element according to claim 1 , wherein:
the p-type thermoelectric material layers and the n-type thermoelectric material layers are extending as far as to backsides of the first substrates and the second substrates through first contact holes and second contact holes respectively, and
adjacent pairs of the p-type thermoelectric material layers and the n-type thermoelectric material layers are electrically connected.
8. The thermoelectric conversion element according to claim 1 , wherein the contact holes appear alternately at opposite ends of the p-substrate and n-substrate.