METHOD OF CHANGING THE OPTICAL PROPERTIES OF HIGH RESOLUTION CONDUCTING PATTERNS
The disclosure disclosed herein is a method for altering the optical properties of high resolution printed conducting patterns by initiating a chemical reaction to a passivating layer on the patterns with optical properties differing from the untreated material. The electrical properties are maintained after this reacted, passivating, layer is formed.
1 . A method of changing the optical properties of a high resolution conductive pattern comprising:
printing a first microscopic pattern on a first side of a substrate using an ink comprising a plating catalyst;
curing the substrate;
printing a second microscopic pattern using the ink;
plating the substrate, wherein plating the substrate comprising electroless plating, to form a high resolution conductive pattern (HRCP) on the substrate;
disposing, on the substrate, a reactant, to form a reacting pattern comprising a reacted layer, wherein the reacted layer thickness is between 25 nm-5000 nm; and
rinsing the substrate.
2 . The method of claim 1 , wherein the electroless plating comprises disposing at least a portion of the substrate in a plating tank comprising a conductive material in a liquid state to form a high resolution conductive pattern.
3 . The method of claim 2 , wherein the conductive material is one of copper (Cu), silver (Ag), gold (Au), nickel (Ni), tin (Sn) and Palladium (Pd).
4 . The method of claim 1 , wherein the HRCP comprises a plurality of lines, and wherein each line width of the plurality of line widths is between 1-20 microns.
5 . The method of claim 1 , wherein the HRCP comprises a plurality of lines, and wherein each line width of the plurality of lines is between 2-5 microns.
6 . The method of claim 1 , wherein the substrate comprising the first microscopic pattern is a first substrate, wherein the second microscopic pattern is printed on one of the first side of the first substrate adjacent to the first pattern, a second side of the first substrate, or on a second substrate, wherein the second substrate is different from the first substrate.
7 . The method of claim 1 wherein the substrate is one of a flexible polymer, paper, or glass.
8 . The method of claim 1 further comprising disposing a mask on at least part of the HRCP, forming a masked portion and an unmasked portion of the HRCP, and disposing, on the unmasked portion, a reactant, forming a reacting pattern comprising a reacted layer.
9 . The method of claim 1 , wherein the reactant comprises SeO 2 , CuSO 4 , and phosphoric acid.
10 . The method of claim 9 , wherein the reactant comprises 1-4 wt % SeO 2 , 1.5-3 wt % CuSO 4 , and 3 wt %-7 wt % phosphoric acid.
11 . The method of claim 1 , wherein disposing the reactant comprises immersing the substrate in a tank of reactant.
12 . The method of claim 9 , wherein the reactant is removed by dimethyl sulfoxide.
13 . The method of claim 9 , wherein rinsing the substrate comprises rinsing the substrate in one of isopropyl alcohol and deionized water.
14 . The method of claim 1 wherein the reactant comprises HNO 3 , SeO 2 , and CuSO 4 .
15 . The method of claim 14 wherein the reactant comprises 7-15% Nitric Acid (HNO 3 ), 0.5-3% Selenium Dioxide (SeO 2 ), and 3-10% Copper Sulfate (CuSO 4 ).
16 . The method of claim 14 , further comprising removing the reactant from the substrate using dimethyl sulfoxide.
17 . The method of claim 8 , wherein disposing the mask, disposing the reactant, are performed by one of a spray station or a spin coating stations.
18 . The method of claim 1 , further comprising removing the reactant, wherein removing the reactant is performed by one of a spray station or a spin coating stations.
19 . The method of claim 1 , wherein the reactant is a triethanolamine sodium selenosulphate (Na2SeSO3) in an aqueous alkaline medium at 5° C., and wherein rinsing the substrate comprises rinsing the substrate using an immersion rinse and deionized water.
20 . The method of claim 1 , wherein the reactant is a solution of potassium sulfide and ethanol, and wherein rinsing the substrate comprises rinsing the substrate using an immersion rinse and ethanol.
21 . A method of changing the optical properties of a high resolution conductive pattern comprising:
printing a first microscopic pattern on a first side of a substrate using an ink comprising a plating catalyst;
curing the first substrate;
printing a second microscopic pattern using the ink;
plating the substrate, wherein plating the substrate comprising electroless plating, to form a high resolution conductive pattern (HRCP) on the substrate;
disposing, on the substrate, a reactant, to form a reacting pattern comprising a reacted layer, wherein the reacted layer thickness is between 25 nm-5000 nm, and wherein the reactant comprises SeO 2 , CuSO 4 , and phosphoric acid; and
rinsing the substrate in one of in one of isopropyl alcohol and deionized water.
22 . The method of claim 21 , wherein the electroless plating comprises disposing at least part of the substrate in a plating tank comprising a conductive material in a liquid state to form a high resolution conductive pattern.
23 . The method of claim 22 , wherein the conductive material is one of copper (Cu), silver (Ag), gold (Au), nickel (Ni), tin (Sn) and Palladium (Pd).
24 . The method of claim 21 , wherein the HRCP comprises a plurality of lines, and wherein a line width of the plurality of line widths is between 1-20 microns.
25 . The method of claim 21 , wherein the HRCP comprises a plurality of lines, and wherein each line width of the plurality of lines is between 2-5 microns.
26 . The method of claim 21 , wherein the substrate comprising the first microscopic pattern is a first substrate, wherein the second microscopic pattern is printed on one of the first side of the first substrate adjacent to the first pattern, a second side of the first substrate, or on a second substrate, wherein the second substrate is different from the first substrate.
27 . The method of claim 21 , wherein the reactant comprises 1-4 wt % SeO 2 , 1.5-3 wt % CuSO 4 , and 3 wt %-7 wt % phosphoric acid.
28 . The method of claim 21 , wherein disposing the reactant comprises immersing the substrate in a tank of reactant.
29 . The method of claim 21 , wherein the reactant is removed by dimethyl sulfoxide.
30 . The method of claim 21 , further comprising removing the reactant, wherein removing the reactant is performed by one of a spray station or a spin coating stations.