Optoelectronic component and method for producing an optoelectronic component

1. An optoelectronic component comprising:

a substrate,

a semiconductor chip arranged on the substrate, and

a light-transmissive cover,

wherein the light-transmissive cover covers at least an area of the semiconductor chip facing away from the substrate,

the light-transmissive cover has a hardness greater than that of silicone, and

a connecting material is arranged as a potting material in a cavity between the light-transmissive cover and the substrate such that those areas of the semiconductor chip not covered by the substrate are surrounded by the connecting material, wherein the connecting material forms a cavity seal between the substrate and the cover at the same time.

2. The optoelectronic component according to claim 1 , wherein a cavity is formed in the light-transmissive cover.

3. The optoelectronic component according to claim 2 , wherein the semiconductor chip extends at least partly into the cavity.

4. The optoelectronic component according to claim 2 , wherein the cavity is filled with a gas.

5. The optoelectronic component according to claim 2 , wherein the cavity is fixed with a connecting material as an adhesive in the form of a cavity seal on the substrate.

6. The optoelectronic component according to claim 1 , wherein the connecting material comprises silicone.

7. The optoelectronic component according to claim 1 , wherein the light-transmissive cover is a glass cover.

8. The optoelectronic component according to claim 1 , wherein the light-transmissive cover has an antireflection layer.

9. The optoelectronic component according to claim 1 , wherein the light-transmissive cover has a thickness of approximately 30 μm to approximately 100 μm.

10. The optoelectronic component according to claim 1 , wherein an imaging element, in particular a lens, is arranged on an area of the light-transmissive cover facing away from the substrate.

11. The optoelectronic component according to claim 1 , wherein a conversion layer is applied directly to the area of the semiconductor chip facing away from the substrate.

12. A method of producing an optoelectronic component comprising:

providing a light-transmissive cover;

applying connecting material filled with phosphor particles to the light-transmissive cover;

providing a substrate on which a plurality of semiconductor chips are arranged;

connecting the substrate with the plurality of semiconductor chips to the light-transmissive cover, wherein the semiconductor chips face in a direction of the light-transmissive cover rotating the unit comprising substrate and light-transmissive cover by 180° about an axis lying in a plane formed between the light-transmissive cover and the substrate after connecting the substrate to the light-transmissive cover and before curing the connecting material filled with phosphor particles such that the phosphor particles are sedimented; and

curing the connecting material.

13. The method according to claim 12 , wherein the light-transmissive cover has a circumferential potting seal at its outer edge.

14. The method according to claim 12 , wherein the light-transmissive cover has a plurality of cavities with webs situated therebetween.

15. The method according to claim 14 , wherein applying connecting material to the light-transmissive cover comprises applying connecting material as an adhesive to webs between the cavities.

16. The method according to claim 12 , wherein applying connecting material to the light-transmissive cover comprises filling the light-transmissive cover with connecting material as a potting material.

17. The method according to claim 12 , wherein, when providing the substrate with a plurality of semiconductor chips, a conversion layer is already applied directly to the area of the semiconductor chips facing away from the substrate.

18. The optoelectronic component of claim 1 , wherein side faces of the optoelectronic component are formed at least partially by the connecting material.