EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME
Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm 2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600° C. to 1700° C., at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 μm/hr.
1 . An epitaxial silicon carbide single crystal substrate having a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less, the substrate being characterized in that, in the epitaxial layer, the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence is less than 10/cm 2 in total.
2 . The epitaxial silicon carbide single crystal substrate according to claim 1 , wherein the stacking faults emit light at a wavelength of 420 nm and are Shockley type or 3C type stacking faults, the number of the stacking faults being less than 5/cm 2 .
3 . The epitaxial silicon carbide single crystal substrate according to claim 1 , wherein the stacking faults emit light at a wavelength of 460 nm and are Shockley type stacking faults, the number of the stacking faults being less than 5/cm 2 .
4 . The epitaxial silicon carbide single crystal substrate according to claim 1 , wherein the stacking faults emit light at a wavelength of 480 nm and are Shockley type stacking faults, the number of the stacking faults being less than 3/cm 2 .
5 . The epitaxial silicon carbide single crystal substrate according to claim 1 , wherein the stacking faults emit light at a wavelength of 500 nm and are Shockley type stacking faults, the number of the stacking faults being less than 3/cm 2 .
6 . A method for producing an epitaxial silicon carbide single crystal substrate, which is a method for producing the epitaxial silicon carbide single crystal substrate according to claim 1 by epitaxially growing silicon carbide on a silicon carbide single crystal substrate having an off-angle of 4° or less, the method being characterized in that when the silicon carbide is epitaxially grown on the silicon carbide single crystal substrate, chlorosilane (SiH m Cl n (m+n=4; m is an integer of 0 to 3; and n is an integer of 1 to 4)) is used as a silicon-based material gas and a hydrocarbon gas is used as a carbon-based material gas; a ratio of the number of carbon atoms in the hydrocarbon gas to the number of silicon atoms in the chlorosilane (C/Si ratio) in the epitaxial growth is 0.5 to 1.0; and the epitaxial growth is carried out at a temperature of 1600 to 1700° C.
7 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 6 , wherein the silicon carbide single crystal substrate has a diameter of 4 inches or more.
8 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 6 , wherein the epitaxial growth is carried out at a growth rate of 1 to 3 μm/hour.
9 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 6 , wherein the epitaxial growth uses a thermal chemical vapor deposition method (CVD method).
10 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 6 , wherein the silicon-based material gas is trichlorosilane (SiHCl 3 ).
11 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 6 , wherein the silicon-based material gas is tetrachlorosilane (SiCl 4 ).
12 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 7 , wherein the epitaxial growth is carried out at a growth rate of 1 to 3 μm/hour.
13 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 7 , wherein the epitaxial growth uses a thermal chemical vapor deposition method (CVD method).
14 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 8 , wherein the epitaxial growth uses a thermal chemical vapor deposition method (CVD method).
15 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 7 , wherein the silicon-based material gas is trichlorosilane (SiHCl 3 ).
16 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 8 , wherein the silicon-based material gas is trichlorosilane (SiHCl 3 ).
17 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 9 , wherein the silicon-based material gas is trichlorosilane (SiHCl 3 ).
18 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 7 , wherein the silicon-based material gas is tetrachlorosilane (SiCl 4 ).
19 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 8 , wherein the silicon-based material gas is tetrachlorosilane (SiCl 4 ).
20 . The method for producing an epitaxial silicon carbide single crystal substrate according to claim 9 , wherein the silicon-based material gas is tetrachlorosilane (SiCl 4 ).