Plasma etching apparatus component and manufacturing method for the same
The present invention provides a plasma etching apparatus component 1 includes a base material 10 and an yttrium oxide coating 20 formed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coating 20 contains at least one of particulate portions and non-particulate portions. The yttrium oxide coating 20 has a film thickness of 10 μm or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.
1. A plasma etching apparatus component comprising:
a base material; and
an yttrium oxide coating formed by an impact sintering process in which all yttrium oxide base powder is substantially unmolten while being sprayed onto the base material and adhered to the surface of the base material, and the yttrium oxide coating is configured to cover a surface of the base material, wherein
the yttrium oxide coating contains at least one of particulate portions made of yttrium oxide and non-particulate portions made of yttrium oxide, where the particulate portions are portions in which a grain boundary partitioning inner and outer regions of a crystal grain is observed under a microscope, and the non-particulate portions are portions in which the grain boundary is not observed under a microscope,
the yttrium oxide coating has a film thickness of 10 μm or above and a film density of 90% or above,
when a surface of the yttrium oxide coating is observed under a microscope, in an observation field of 20 μm×20 μm, the particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%, and
wherein when a peak value of the strongest peak of a cubic crystal is denoted by Ic and a peak value of the strongest peak of a monoclinic crystal is denoted by Im, both the peak values being obtained by XRD analysis, the yttrium oxide coating has a peak value ratio Im/Ic of 0.2 to 0.6.
2. The plasma etching apparatus component according to claim 1 , wherein purity of yttrium oxide in the yttrium oxide coating is 99.9% or above.
3. The plasma etching apparatus component according to claim 1 , wherein an average particle size of particulate portions and non-particulate portions in the yttrium oxide coating is 5 μm or below.
4. The plasma etching apparatus component according to claim 1 , wherein the yttrium oxide coating has a film thickness of 10 to 200 μm, and a film density of 99 to 100%.
5. The plasma etching apparatus component according to claim 1 , wherein an average particle size of the particulate portions in the yttrium oxide coating is 2 μm or below.
6. The plasma etching apparatus component according to claim 3 , wherein purity of yttrium oxide in the yttrium oxide coating is 99.99% or above.
7. The plasma etching apparatus component according to claim 1 , wherein the yttrium oxide coating has a surface roughness Ra of 3 μm or below.