Uni-travelling-carrier photodiode
View Patent ↗A uni-travelling carrier photodiode includes an absorption region of p-type doped material. The photodiode further includes a first collector layer and second collector layer wherein the absorption region is located between the first collector layer and the second collector layer.
1. A uni-travelling carrier photodiode comprising;
an absorption region of p-type doped material including a first p-doped sub-region, a second p-doped sub-region, the absorption region including variation in a level of doping or composition of the p-type doped material; and
a first collector layer and a second collector layer, the absorption region being located between the first collector layer and the second collector layer, a first depleted section being located between the first sub-region and the first collector layer and a second depleted section being located between the second sub-region and the second collector layer.
2. The uni-travelling carrier photodiode of claim 1 , wherein
the absorption region is configured to generate electrons in response to an absorption of an incident light, and
a number of the electrons diffuse toward the first collector layer and a different number of the electrons diffuse toward the second collector layer.
3. The uni-travelling carrier photodiode of claim 1 , further comprising:
a contact layer made of p-type material, said contact layer being located within the absorption region.
4. The uni-travelling carrier photodiode of claim 1 , wherein the variation in the level of doping of the p-type doped includes a gradual p-doping configuration of said p-type doped material.
5. The uni-travelling carrier photodiode of claim 1 , wherein the p-type doped material of the absorption region comprises a gradual composition of material having a uniform p-doping level.
6. An optical equipment comprising;
a uni-travelling carrier photodiode including,
an absorption region of p-type doped material including a first p-doped sub-region, a second p-doped sub-region, the absorption region including variation in a level of doping or composition of the p-type doped material; and
a first collector layer and a second collector layer, the absorption region being located between the first collector layer and the second collector layer, a first depleted section being located between the first sub-region and the first collector layer and a second depleted section being located between the second sub-region and the second collector layer.