IP Library Granted Patent US 9,171,688
Granted Patent B2
US 9,171,688 · App. 13/994,015 · Granted Oct 27, 2015

Cold field emission cathode using carbon nanotubes

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Quick Facts
Patent No.
US 9,171,688
App. No.
13/994,015
Granted
Oct 27, 2015
Kind
B2
Abstract

Devices for use in cold-field emission and methods of forming the device are generally presented. In one example, a method may include providing a conductive base, dispersing carbon-filled acrylic onto the conductive base to form a conductive film, coupling a copper plate to a first side of the conductive film, and irradiating the conductive film. The method may further include dispersing carbon nanotubes (CNTs) on a second side of the conductive film to form a substantially uniform layer of CNTs, removing excess CNTs from the second side, and curing the conductive film. In one example, a device may include a polycarbonate base, a layer of carbon-filled acrylic on one side of the polycarbonate base and a layer of irradiated carbon-filled acrylic on the other, a copper plate coupled to the carbon-filled acrylic, and a substantially uniform layer of randomly aligned CNTs dispersed on the irradiated carbon-filled acrylic.

Claims (39)

1. A method of forming a cold field emission cathode, comprising:

providing a conductive base;

dispersing carbon-filled acrylic onto a portion of a first side and a portion of a second side of the conductive base to form a first side and a second side of a conductive film;

coupling a copper plate to the first side of the conductive film;

irradiating at least a portion of the second side of the conductive film;

dispersing a plurality of carbon nanotubes (CNTs) onto a portion of the second side of the conductive film to form a substantially uniform layer of CNTs;

removing excess CNTs from the portion of the second side of the conductive film; and

curing the conductive film.

2. The method of claim 1 , wherein the conductive base comprises a polymeric carbon film.

3. The method of claim 1 , wherein the copper plate comprises an ultrapure copper plate.

4. The method of claim 1 , wherein irradiating the second side of the conductive film comprises irradiating the second side of the conductive film with infrared light.

5. The method of claim 1 , wherein irradiating the second side of the conductive film comprises removing at least a portion of the carbon-filled acrylic.

6. The method of claim 1 , wherein the substantially uniform layer of CNTs has a surface density that is between about 0.0015 grams per cm 2 to about 0.006 grams per cm 2 .

7. The method of claim 1 , wherein the CNTs are multi-walled CNTs (MWCNTs).

8. The method as in claim 7 , wherein the MWCNTs each comprise between about 25 to about 40 walls.

9. The method of claim 1 , wherein the CNTs have a diameter that is between about 25 nm to about 40 nm.

10. The method of claim 1 , wherein the CNTs have a length that is greater than or equal to about 10 μm.

11. The method of claim 1 , wherein the CNTs are randomly aligned with respect to one another.

12. The method of claim 1 , wherein removing the excess CNTs comprises loosening the excess CNTs.

13. The method of claim 1 , wherein curing the conductive film comprises curing the conductive film at a temperature of about 120° C.

14. The method of claim 1 , further comprising forming at least one electrode comprising the conductive film.

15. A device, comprising:

a polycarbonate base;

a layer of carbon-filled acrylic on a portion of a first side of the polycarbonate base;

a layer of irradiated carbon-filled acrylic on a portion of a second side of the polycarbonate base;

a copper plate coupled to the layer of carbon-filled acrylic on the portion of the first side of the polycarbonate base; and

a substantially uniform layer of randomly aligned carbon nanotubes (CNTs) dispersed on the layer of irradiated carbon-filled acrylic.

16. The device of claim 15 , wherein the CNTs are multi-walled CNTs (MWCNTs).

17. The device of claim 15 , wherein carbon in the irradiated carbon-filled acrylic forms a portion of a conductive path between the copper plate and the CNTs.

18. The device of claim 15 , wherein the device is a cold field emission cathode.

19. The device of claim 16 , wherein the MWCNTs each comprise between about 25 to about 40 walls.

20. A method of forming a cold field emission cathode, comprising:

providing a polycarbonate base;

dispersing a mixture of carbon and acrylic on a portion of a first side and a portion of a second side of the polycarbonate base;

coupling a copper plate to the mixture on the first side of the polycarbonate base;

irradiating the mixture on the second side of the polycarbonate base, thereby dissolving at least a portion of the acrylic in the mixture on the second side of the polycarbonate base;

dispersing a plurality of randomly aligned carbon nanotubes (CNTs) on the irradiated mixture to form a substantially uniform layer of CNTs; and

curing the polycarbonate base, the mixture of carbon and acrylic, the copper plate, and the CNTs, wherein carbon in the irradiated mixture forms a portion of a conductive path between the copper plate and the CNTs.

21. The method of claim 20 , wherein the CNTs are multi-walled CNTs.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Jul 31, 2019
From: CRESTLINE DIRECT FINANCE, L.P.
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 049924/0794 →
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2013
From: ANAND, SANDEEP VENKIT; KRISHNASWAMY, ARVIND; MAHAPATRA, DEBIPROSAD ROY
To: INDIAN INSTITUTE OF SCIENCE BANGALORE
Reel/Frame 030623/0405 →