Battery and assembly method
An example includes a method including forming a battery electrode by disposing an active material coating onto a silicon substrate, assembling the battery electrode into a stack of battery electrodes, the battery electrode separated from other battery electrodes by a separator, disposing the stack in a housing, filling the interior space with electrolyte, and sealing the housing to resist the flow of electrolyte from the interior space.
1. An apparatus, comprising:
a stack of battery electrodes, comprising:
a bipolar battery plate including:
an electrically conductive silicon wafer and an active material disposed on at least one surface of the silicon wafer to provide a first battery electrode; and
a second battery electrode located on a surface of the electrically conductive silicon wafer opposite the first electrode; and
a third battery electrode disposed in the stack and physically spaced apart from the second electrode;
a housing, with the stack of battery electrodes disposed in the housing; and
an electrolyte disposed in the housing such that a portion of the electrolyte in contact with the second and third battery electrodes is isolated from the first battery electrode at least in part by the electrically conductive silicon wafer;
wherein the stack of battery electrodes is configured to establish a conduction path between the first and second battery electrodes through the conductive silicon wafer; and
wherein a silicide is included on at least one surface of the conductive silicon wafer between the active material and the conductive silicon wafer.
2. The apparatus of claim 1 , further comprising:
a seal coupled between the housing and the stack to define an interior space extending between the second battery electrode and the third battery electrode, the seal adapted to resist a flow of electrolyte from the interior space;
a cover coupled to the housing; and
a cover seal between the cover and the housing, the cover seal adapted to resist the flow of the electrolyte from inside the interior space.
3. The apparatus of claim 1 in which at least one barrier layer is disposed between the silicide intervening layer and the active material.
4. The apparatus of claim 1 , wherein the silicon wafer is from about 0.2 millimeters thick to about 0.5 millimeters thick and the active material is from about 0.2 millimeters thick to about 0.5 millimeters thick, and the silicon wafer has a resistivity from about 0.001 Ω-cm to about 1 Ω-cm.
5. The apparatus of claim 1 , wherein the wafer has a cut surface onto which the active material is disposed and the active material is porous.
6. An apparatus, comprising:
a stack of battery electrodes, comprising:
a bipolar battery plate including:
an electrically conductive silicon wafer and an active material including lead disposed on at least one surface of the silicon wafer to provide a first battery electrode; and
a second battery electrode located on a surface of the electrically conductive silicon wafer opposite the first electrode; and
a third battery electrode disposed in the stack and physically spaced apart from the second electrode;
a housing, with the stack of battery electrodes disposed in the housing; and
an electrolyte disposed in the housing such that a portion of the electrolyte in contact with the second and third battery electrodes is isolated from the first battery electrode at least in part by the electrically conductive silicon wafer;
wherein the stack of battery electrodes is configured to establish a conduction path between the first and second battery electrodes through the electrically conductive silicon wafer; and
wherein a silicide is included on at least one surface of the conductive silicon wafer between the active material and the conductive silicon wafer.
7. The apparatus of claim 6 in which at least one barrier layer is disposed between the silicide intervening layer and the active material.
8. The apparatus of claim 6 , wherein the silicon wafer is from about 0.2 millimeters thick to about 0.5 millimeters thick and the active material is from about 0.2 millimeters thick to about 0.5 millimeters thick, and the silicon wafer has a resistivity from about 0.001 Ω-cm to about 1 Ω-cm.
9. The apparatus of claim 6 , wherein the wafer has a cut surface onto which the active material is disposed and the active material is porous.
10. The apparatus of claim 1 , wherein the silicide layer includes one or more of nickel, tungsten, titanium, or molybdenum.
11. The apparatus of claim 1 , wherein the active material includes lead, and wherein the electrolyte comprises sulfuric acid.
12. The apparatus of claim 1 , wherein the housing includes a vent.
13. The apparatus of claim 1 , wherein the silicon wafer comprises a metallurgical grade conductive silicon wafer.
14. The apparatus of claim 1 , wherein the silicon wafer comprises a multi-crystalline conductive silicon wafer.
15. The apparatus of claim 3 , wherein the barrier layer includes one or more of TiN, TaN, molybdenum selenide, tin, or chrome.
16. The apparatus of claim 6 , wherein the active material includes a lead paste.
17. The apparatus of claim 6 , wherein the silicide layer includes one or more of nickel, tungsten, titanium, or molybdenum.
18. The apparatus of claim 6 , wherein the conductive silicon wafer comprises a metallurgical grade silicon wafer.
19. The apparatus of claim 6 , wherein the conductive silicon wafer comprises a multi-crystalline silicon wafer.
20. The apparatus of claim 7 , wherein the barrier layer includes one or more of TiN, TaN, molybdenum selenide, tin, or chrome.