Memristive element and electronic memory based on such elements

1. A memristive element (M) formed by:

a first electrode;

a second electrode; and

an active region consisting of a thin film of an insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, exhibiting conductivity that is both electronic and ionic in nature, said active region making direct electrical contact with said first and second electrodes, wherein said first electrode is a surface of a degenerate semiconductor substrate.

2. The memristive element as claimed in claim 1 , in which said thin film is deposited on a surface of said first electrode.

3. The memristive element as claimed in claim 1 , in which said second electrode is formed by a metallic film deposited on said thin film.

4. The memristive element as claimed in claim 1 , in which said thin film has a polycrystalline or amorphous structure.

5. The memristive element as claimed in claim 1 , in which said thin film is 10 μm or less in thickness.

6. The memristive element as claimed in claim 1 , in which said insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, has the following formula:

A x ( M 1 ) v ( M 2 ) w ( M 3 ) y ( M 4 ) z B β

where:

A represents one or more alkali metals;

M 1 represents at least one metal chosen from Ag and Cu;

M 2 represents at least one metal chosen from Mg, Ca, Sr, Ba, Ti, Mn, Fe, Cu and Zn;

M 3 represents at least one metal chosen from Al, Ti, V, Cr, Mn, Fe, Co, Ni, Mo and Ta;

M 4 represents at least one metal chosen from Ti, V, Mn, Co, Ni, Zr, Sn and Ta;

B represents at least one nonmetal chosen from O, S, Se and Te;

the parameters x, v, w, y, z and β satisfy the following inequalities, x in addition being chosen in the stability field of the compounds:

0<x≦1

0≦v≦1

0≦w<1

0≦y≦1

0≦z<1

1.5≦β; and

the parameters x, v, w, y, z also satisfy the equality: v+w+y+z=1.

7. The memristive element as claimed in claim 6 , in which said insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, has the following formula:

A′ x M y B β

where:

A′ represents at least one alkali metal chosen from Li and Na;

M represents at least one metal chosen from Mn, Fe, Co and Ni;

B represents at least one nonmetal chosen from O and S; and

the parameters x, y and β satisfy the following inequalities, x in addition being chosen in the stability field of the compounds:

0<x≦1

y=1

1.5≦β.

8. The memristive element as claimed in claim 6 , in which said insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, is chosen from the following: Na x CoO 2 , Li x CoO 2 , Li x NiO 2 , Li x Mn 4 O 9 , Li x TiO 2 , Li 4+x Ti 5 O 12 , Li x V 2 O 5 , Li x V 6 O 13 , Li x Ni y Co (1-y) O 2 , Li x FeO 2 , Li x MnO 2 , Li x Mn 2 O 4 , Li x MoO 3 and Li x Ni 1/3 Mn 1/3 Co 1/3 O 2 , the parameter x being chosen in the stability field of these compounds.

9. The memristive element as claimed in claim 8 , in which said insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, is chosen from Na x CoO 2 and Li x CoO 2 .

10. The memristive element as claimed in claim 1 , in which said insertion compound of at least one alkali metal, made of an oxide or chalcogenide of at least one transition metal, has a lamellar structure.

11. The memristive element as claimed in claim 1 , in which at least one of said first and said second electrodes is made of degenerate silicon.

12. The memristive element as claimed in claim 11 , in which one of said first and said second electrodes is made of degenerate silicon, and said insertion compound of at least one alkali metal is Li x CoO 2 .

13. The memristive element as claimed in claim 1 , in which at least one of said first and said second electrodes is made of a material chosen from aluminum, gallium, indium, antimony, bismuth, cadmium, zinc, tin, and lead.

14. A nonvolatile electronic memory formed from a plurality of memristive elements as claimed in claim 1 , arranged in a matrix in rows and columns, all the elements of a given row sharing a common first electrode, and all the elements of a given column sharing a common second electrode.

15. The memristive element as claimed in claim 1 , in which said thin film is between 10 nm and 1 μm in thickness.