METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
A method for producing an optoelectronic component includes forming an organic functional layer structure on or above a first electrode layer, and forming a second electrode layer on or above the organic functional layer structure, wherein a local modification structure is formed in the first electrode layer or in the second electrode layer.
1 . A method for producing an optoelectronic component, wherein the method comprises:
forming an organic functional layer structure on or above a first electrode layer; and
forming a second electrode layer on or above the organic functional layer structure;
wherein a local modification structure is formed in the first electrode layer or in the second electrode layer.
2 . The method as claimed in claim 1 ,
wherein at at least one predefined position the local modification structure is formed by means of locally heating the material of the respective layer.
3 . The method as claimed in claim 2 ,
wherein the local heating of the material of the respective layer is effected using a laser, preferably in such a way that a laser internal engraving of the respective layer is carried out.
4 . (canceled)
5 . The method as claimed in claim 1 , furthermore comprising:
forming a first electrode layer on or above a substrate;
and forming a cover layer on or above the second electrode layer;
wherein preferably a local modification structure is formed in the substrate and in the cover layer.
6 . The method as claimed in claim 5 , furthermore comprising:
forming an optically translucent intermediate layer on or above the substrate, wherein the first electrode layer is formed on or above the optically translucent intermediate layer; and forming an encapsulation layer on or above the second electrode layer;
wherein preferably a local modification structure is formed in the optically translucent intermediate layer and in the encapsulation layer.
7 . The method as claimed in claim 1 ,
wherein that layer in which a local modification structure is formed is formed with a layer thickness of at least 1 μm.
8 . The method as claimed in claim 1 ,
wherein the local modification structure is formed with a size in the sub-micrometer range; or
wherein the local modification structure is formed with a size of at least one micrometer.
9 . An optoelectronic component, comprising:
a first electrode layer;
an organic functional layer structure on or above the first electrode layer; and
a second electrode layer on or above the organic functional layer structure;
wherein a local modification structure is formed in the first electrode layer or in the second electrode layer.
10 . (canceled)
11 . The optoelectronic component as claimed in claim 9 ,
furthermore comprising a substrate, wherein the first electrode layer is arranged on or above the substrate; and a cover layer on or above the second electrode layer;
wherein preferably a local modification structure is formed in the substrate and in the cover layer.
12 . The optoelectronic component as claimed in claim 9 , furthermore comprising:
an optically translucent intermediate layer on or above the substrate, wherein the first electrode layer is arranged on or above the optically translucent intermediate layer; and an encapsulation layer on or above the second electrode layer;
wherein preferably a local modification structure is formed in the optically translucent intermediate layer and in the encapsulation layer.
13 . The optoelectronic component as claimed in claim 9 ,
wherein that layer which has a local modification structure has a layer thickness of at least 1 μm.
14 . The optoelectronic component as claimed in claim 9 ,
wherein the local modification structure has a size in the sub-micrometer range; or
wherein the local modification structure has a size of at least one micrometer.