Method for producing an optoelectronic component, and optoelectronic component
View Patent ↗A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.
1. A method of producing an optoelectronic component comprising:
providing a cavity;
introducing a liquid matrix material with phosphor particles distributed therein into the cavity;
introducing a semiconductor chip into the matrix material after the liquid matrix material is introduced into the cavity;
sedimenting the phosphor particles in the matrix material;
curing the matrix material, wherein a conversion layer comprising phosphor particles is produced, said conversion layer being arranged on the semiconductor chip; and
laterally potting the optoelectronic component with a further matrix material, into which scattering particles are introduced after the conversion layer is produced, wherein the scattering particles are distributed homogeneously in the further matrix material.
2. The method according to claim 1 , wherein the cavity is removed after the matrix material has been cured.
3. The method according to claim 1 , wherein the cavity is produced by arrangement of elastic side walls onto an inelastic plate.
4. The method according to claim 3 , further comprising applying a substrate with a semiconductor chip arranged thereon to the elastic side walls of the cavity such that the semiconductor chip faces toward the inelastic plate.
5. The method according to claim 4 , wherein a volume formed by the substrate, the inelastic plate and the elastic side walls and is filled with the matrix material is compressed.
6. The method according to claim 5 , wherein a unit composed of substrate, inelastic plate and elastic side walls, in the compressed state, is rotated by 180° about an axis lying in the plane formed between semiconductor chip and substrate.
7. The method according to claim 2 , further comprising removing the cavity.
8. The method according to claim 1 , wherein the cavity is produced by arrangement of partly elastic side walls on a substrate, and a semiconductor chip is arranged on the substrate.
9. The method according to claim 8 , wherein the cavity is removed by the partly elastic side walls being detached from the substrate.
10. The method according to claim 1 , wherein an imaging optical unit is applied to the optoelectronic component.