RF device and method for tuning an RF device

1. An RF device, comprising:

a substrate; and

a series circuit that includes a tunable RF component and a DC blocking capacitor;

wherein the series circuit is arranged on the substrate;

wherein the tunable RF component is coupled to a RF signal terminal and the DC blocking capacitor is coupled to a fixed voltage terminal such that the series circuit is coupled between the RF signal terminal and the fixed voltage terminal in such a way that the fixed voltage terminal is electrically isolated from the RF signal terminal with respect to a DC current;

a cap at least partially covering a first surface of the substrate;

a bond frame that couples the cap to the substrate;

a cavity between the first surface of the substrate and the cap; and

a first feed-through having a first conducting line that electrically connects the series circuit to the RF signal terminal and is electrically isolated from the bond frame,

wherein the tunable RF component is coupled to a driver terminal, and

wherein the fixed voltage terminal is electrically and physically coupled to the bond frame.

2. The RF device according to claim 1 , wherein a reference potential terminal is coupled to the RF signal terminal and to the fixed voltage terminal such that the RF signal terminal and the fixed voltage terminal are DC grounded.

3. The RF device according to claim 1 , wherein the substrate comprises a semiconductor substrate.

4. The RF device according to claim 1 , wherein the tunable RF component is directly connected to the RF signal terminal, which is arranged on the substrate and wherein the DC blocking capacitor is directly connected to the fixed voltage terminal, which is arranged on the substrate.

5. The RF device according to claim 1 , wherein the tunable RF component comprises a component selected from the group consisting of a varactor diode, a PIN diode, a MEMS capacitor, a capacitor with a tunable dielectric layer, a galvanic MEMS component and a pHEMT.

6. The RF device according to claim 1 , wherein the tunable RF component has a first terminal having a first parasitic capacitor and a second terminal having a second parasitic capacitor that has a larger capacitance value than the first parasitic capacitor and wherein the tunable RF component is arranged such that the second terminal of the tunable RF component is connected to the DC blocking capacitor.

7. A system, comprising:

the RF device according to claim 1 ; and

an antenna coupled to the RF signal terminal.

8. A method for tuning an RF device having a substrate, a cap at least partially covering a first surface of the substrate, a bond frame that couples the cap to the substrate, and a cavity between the first surface of the substrate and the cap, the method comprising:

providing an RF input signal that is DC grounded to an RF signal terminal;

providing a ground potential to a fixed voltage terminal, wherein a series circuit of a tunable RF component and a DC blocking capacitor is arranged on the substrate and is coupled between the RF signal terminal and the fixed voltage terminal in such a way that the fixed voltage terminal is electrically isolated from the RF signal terminal such that the tunable RF component is coupled to the RF signal terminal and the DC blocking capacitor is coupled to the fixed voltage terminal; and

providing a driver signal that controls the tunable RF component,

wherein the RF signal terminal is connected to the series circuit through a feed-through having a first conducting line that electrically connects the series circuit to the RF signal terminal and is electrically isolated from the bond frame, and

wherein the fixed voltage terminal is electrically and physically coupled to the bond frame.