VCSEL array with increased efficiency
View Patent ↗The present invention relates to a VCSEL array comprising several VCSELs arranged side by side on a common substrate ( 1 ). Each VCSEL is formed of at least a top mirror ( 5, 14 ), an active region ( 4 ), a current injection layer ( 3 ) and an undoped bottom semiconductor mirror ( 2 ). The current injection layer ( 3 ) is arranged between the active region ( 4 ) and the bottom semiconductor mirror ( 2 ). At least an upper layer of the substrate ( 1 ) is electrically conducting. Trenches ( 8 ) and/or holes are formed between the bottom semiconductor mirrors ( 2 ) of said VCSELs to said upper layer of said substrate ( 1 ). A metallization ( 9 ) electrically connects the upper layer of the substrate ( 1 ) with the current injection layer ( 3 ) through said trenches ( 8 ) and/or holes. The proposed VCSEL array allows a homogeneous current injection an has a high efficiency and power density.
1. A VCSEL array comprising several VCSELs arranged side by side on a common substrate, each VCSEL being formed of at least a top mirror, an active region, a current injection layer and an undoped bottom semiconductor mirror, said current injection layer being arranged between said active region and said bottom semiconductor mirror, wherein
at least an upper layer of said substrate is electrically conducting,
trenches and/or holes are formed between said bottom semiconductor mirrors of said VCSELs to said upper layer of said substrate, and
a metallization electrically connects said upper layer of said substrate with said current injection layer through said trenches and/or holes.
2. The VCSEL array according to claim 1 , wherein the substrate is a doped, electrically conducting semiconductor substrate.
3. The VCSEL array according to claim 1 , wherein the substrate is a semiconductor substrate, said upper layer of which is doped.
4. The VCSEL array according to claim 1 , wherein the top mirror is a doped or undoped distributed Bragg reflector.
5. The VCSEL array according to claim 1 , wherein the top mirror is a dielectric mirror.
6. The VCSEL array according to claim 1 , wherein the bottom semiconductor mirror is an undoped distributed Bragg reflector.
7. The VCSEL array according to claim 1 , wherein the top mirror is a p-doped distributed Bragg reflector or dielectric mirror, the substrate is a n-doped semiconductor substrate or a semiconductor substrate with a n-doped upper layer, the current injection layer is n-doped and the bottom semiconductor mirror is an undoped distributed Bragg reflector.