OPTOELECTRONIC COMPONENT AND USE OF A COPPER COMPLEX AS DOPANT FOR DOPING A LAYER
An optoelectronic component includes: a wet-chemically processed hole injection layer; and an additional layer doped with a dopant and adjacent to the wet-chemically processed hole injection layer, the dopant comprising a copper complex having at least one ligand with the chemical structure according to formula I in which E1 and E2 are each independently one of the following elements: sulfur, oxygen or selenium, and R is selected from the group of: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons.
1 . An optoelectronic component comprising:
a wet-chemically processed hole injection layer; and
an additional layer doped with a dopant and adjacent to the wet-chemically processed hole injection layer, the dopant comprising a copper complex having at least one ligand with the chemical structure according to formula I:
in which E 1 and E 2 are each independently one of the following elements: sulfur, oxygen or selenium, and R is selected from the group of: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons.
2 . The optoelectronic component as claimed in claim 1 ,
wherein the copper complex is a copper(I) pentafluorobenzoate.
3 . The optoelectronic component as claimed in claim 1 ,
wherein the copper complex has been introduced as a dopant in a matrix material.
4 . The optoelectronic component as claimed in claim 3 ,
wherein the matrix material comprises 1-TNATA (4,4′,4″-tris(N-(1-naphthyl)-N-phenylamino)triphenylamine.
5 . The optoelectronic component as claimed in claim 1 , further comprising:
an organic layer structure for separation of charge carriers of a first charge type and charge carriers of a second charge type.
6 . The optoelectronic component as claimed in claim 5 ,
wherein the organic layer structure is a charge generating layer sequence.
7 . The optoelectronic component as claimed in claim 5 ,
wherein the organic layer structure includes an n-doped organic semiconductor layer.
8 . The optoelectronic component as claimed in claim 7 ,
wherein a nonconductive interlayer is arranged between the hole injection layer and the n-doped organic semiconductor layer.
9 . The optoelectronic component as claimed in claim 8 ,
wherein the hole injection layer has a doping gradient toward the n-doped organic semiconductor layer.
10 . The optoelectronic component as claimed in claim 9 ,
wherein the doping of the hole injection layer increases toward the n-doped organic semiconductor layer.
11 . The optoelectronic component as claimed in claim 6 ,
comprising a layer stack including the organic layer structure.
12 . The optoelectronic component as claimed in claim 11 ,
wherein the layer stack includes at least one active layer.
13 . The optoelectronic component as claimed in claim 12 ,
wherein the active layer includes an electroluminescent material.
14 . The optoelectronic component as claimed in claim 12 ,
wherein the organic layer structure is arranged between a first active layer and a second active layer.
15 . The optoelectronic component as claimed in claim 10 ,
wherein the organic layer structure has been applied to an electrode.
16 . An use of a copper complex as a dopant for doping a layer arranged adjacent to a wet-chemically processed hole injection layer, wherein the copper complex has at least one ligand with the chemical structure according to formula I:
in which E 1 and E 2 are each independently one of the following elements: sulfur, oxygen or selenium, and R is selected from the group of: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons.
17 . The optoelectronic component as claimed in claim 10 ,
wherein the organic layer structure has been applied to an anode contact.