Wide spectrum LED components

1. An LED component comprising;

a plurality of electrically connected light emitting diodes, at least a portion of said plurality having a peak wavelength emission between 200-500 nm, and

an encapsulant material comprising a photo luminescent material and a base material, said encapsulant material at least partially encapsulating said plurality of light emitting diodes,

wherein the LED component has a first light output spectrum with at least a first output peak in the wavelength range from 600 to 800 nm, said peak having a full width at half maximum of at least 50 nm and a second light output peak corresponding to said portion of the plurality of light emitting diodes, and the second light output peak having a peak wavelength emission between 200 and 500 nm is obtained with at least two emissive semiconductor chips having emissive output wavelength peaks at least 5 nm apart from each other.

2. An LED component according to claim 1 , wherein the density of the photo luminescent material portion of the encapsulant material and the average distance of photo luminescent partials from the plurality of light emitting diodes are such that the LED component has an efficiency of greater than 23%.

3. The LED component as claimed in claim 1 , wherein the first output peak comprises at least one or more photo luminescent material characteristic emissions, photo luminescent emission output peak having a full width at half maximum of at least 100 nm or higher.

4. The LED component as claimed in claim 1 , wherein the full width at half maximum is less than 50 nm for the second optical light output peak at the wavelength range 200 to 500 nm.

5. The LED component as claimed in claim 1 , wherein the output emission in the wavelength range from 600 to 800 nm is photo luminescent emission and the optional output emissions in the wavelength ranges of 200 to 500 nm and 700 to 1000 nm, respectively, are electroluminescent light output emissions.

6. The LED component as claimed in claim 1 , wherein optical emission output in wavelength range of 600 to 800 nm comprises or consists of two photo luminescent emission peaks, both with a full width at half maximum of at least 50 nm.

7. The LED component as claimed in claim 1 , wherein the second optional light output peak in the wavelength range of 200 to 500 nm is obtained with a plurality of light emissive semiconductor diodes comprising;

a) at least one diode with a peak wavelength emission below 450 nm;

b) at least one diode with a peak wavelength emission between 445 and 465 nm; and

c) at least one diode with a peak wavelength emission above 460 nm.

8. The LED component as claimed in claim 1 , comprising at least 10 individual semiconductor components with electro-luminescent emission between 200 and 500 nm.

9. The LED component as claimed in claim 1 , comprising a plurality of semiconductor diode chips with emission characteristics between 200 and 500 in a plastic leaded chip carrier.

10. The LED component according to claim 9 , wherein the carrier comprises an anode, a cathode and a through package metallic heat sink slug.

11. The LED component according to claim 9 , wherein the plastic leaded chip carrier comprises a cavity wherein the cathode, the anode and the heat sink are located.

12. The LED component according to claim 1 , comprising a plurality of diodes, at least a portion of which being positioned from each other at a distance amounting to at least the chip's own width.

13. The LED component according to claim 1 , comprising a plurality of diodes, said diodes or semiconductor diode chips not being centrally aligned.

14. The LED component according to claim 1 , wherein the semiconductor diode chips are coated with a silicone encapsulate containing nano particulate wavelength conversion material.

15. The LED component according to claim 1 , comprising a light output spectrum with at least one peak intensity in the wavelength range of 600 to 800 nm with a full width at half maximum at least 50 nm; a second optional optical light output peak in the wavelength range of 200 to 500 nm; and a third optional output peak in the wavelength range of 700 to 1000 nm wavelength range, and at least one emission peak is obtained by quantum dot light conversion material.

16. The LED component according to claim 1 , comprising a light output spectrum with at least one peak intensity in the wavelength range of 600 to 800 nm with a full width at half maximum at least 150 nm; a second optional optical light output peak in the wavelength range of 200 to 500 nm; and a third optional output peak in the wavelength range of 700 to 1000 nm wavelength range, and at least one emission peak is obtained by nano particulate photo luminescent light conversion material.

17. The LED component according to claim 1 , wherein a plurality of light emitting semiconductor diode chips are electrically parallel connected to each other and at least one additional light emitting semiconductor chip is electrically connected to other diodes in serial.

18. The LED component of the claim 17 , wherein electrically parallel connected light emitting diodes are InGaN semiconductors and the serial connected light emitting diode is AlGaAs or AlGaInP semiconductor diode.

19. A LED component comprising at least one light emitter and being capable of providing a light output spectrum with at least a first output peak in the wavelength range from 600 to 800 nm, said peak having a full width at half maximum of at least 50 nm; a second output peak comprising two emissive peaks in the wavelength range from 200 to 500 nm, the two emissive peaks of the second output peak being at least 5 nm apart from each other and a third optional output peak in the wavelength range from 700 to 1000 nm.

20. A method of aiding in a photo stimulation process comprising the steps of providing a first light output spectrum with at least a first output peak in the wavelength range from 600 to 800 nm, said peak having a full width at half maximum of at least 50 nm; a second output peak in the wavelength range from 200 to 500 nm, and a third optional output peak in the wavelength range from 700 to 1000 nm, wherein said first and said second and third optional outputs are provided from an LED component, wherein the second output peak is obtained with at least two emissive semiconductor chips and the peak emission wavelengths of the chips are at least 5 nm apart from each other.

21. The method of claim 20 , wherein the photo stimulation process is therapeutic, cell grow action, metabolism activation photosynthesis, photomorphogenetic or any combination thereof.

22. The method according to claim 20 , wherein the first output peak of the LED component comprises at least one or more photo luminescent material characteristic emissions, wherein the phosphorescent emission output peak has a full width at half maximum of at least 100 nm or higher.

23. The method according to claim 20 , wherein the full width at half maximum is less than 50 nm for the second optical light output peak at 200 to 500 nm wavelength range.

24. The method according to claim 20 , wherein the output emission in the wavelength range from 600 to 800 nm is photo luminescent emission and the optional output emissions in the wavelength ranges of 200 to 500 nm and 700 to 1000 nm, respectively, are electroluminescent light output emissions.

25. The method according to claim 20 , wherein optical emission output in wavelength range of 600 to 800 nm comprises two photo luminescent emission peaks, both with a full width at half maximum of at least 50 nm.

26. The method according to claim 20 , wherein the second optional light output peak in the wavelength range of 200-500 nm is obtained with a plurality of light emissive semiconductor diodes comprising;

at least one diode with a peak wavelength emission below 450 nm;

at least one diode with a peak wavelength emission between 445 and 465 nm; and

at least one diode with a peak wavelength emission above 460 nm.

27. The method according to claim 20 , comprising a light output spectrum with at least one peak intensity in the wavelength range of 600 to 800 nm with a full width at half maximum at least 50 nm; a second optional optical light output peak in the wavelength range of 200 to 500 nm; and a third optional output peak in the wavelength range of 700 to 1000 nm wavelength range, and at least one emission peak is obtained by quantum dot light conversion material.