Magnetic memory using spin orbit interaction

1. A magnetic memory comprising:

a base layer;

a magnetization free layer, with which the base layer is covered, configured to have invertible magnetization and be magnetized approximately uniformly;

a barrier layer, with which the magnetization free layer is covered, configured to be composed of material different from material of the base layer; and

a magnetization reference layer configured to be arranged on the barrier layer and have fixed magnetization,

wherein when the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without flowing through the magnetization reference layer.

2. The magnetic memory according to claim 1 , further comprising:

a first and second electrodes configured to be arranged at both ends of the base layer,

wherein the first writing current flows from one of the first and second electrodes to the other of the first and second electrodes.

3. The magnetic memory according to claim 1 , further comprising:

a wiring line configured to be arranged near the magnetization free layer,

wherein when the magnetization of the magnetization free layer is inverted, further, a current induced magnetic field is made to be generated near the magnetization free layer by using a second writing current flowing in the wiring line.

4. The magnetic memory according to claim 3 , wherein the magnetization free layer has perpendicular magnetic anisotropy, and

wherein the wiring line is arranged at a position shifted from a position above the magnetization free layer.

5. The magnetic memory according to claim 3 , wherein the magnetization free layer has in-plane magnetic anisotropy, and

wherein the wiring line is arranged at a position above the magnetization free layer.

6. The magnetic memory according to claim 1 , wherein the magnetization free layer has in-plane magnetic anisotropy, and

wherein a cross product of a vector in a film thickness direction of the magnetization free layer and a vector in a flow direction of the first writing current has a component parallel to a direction of the magnetization of the magnetization free layer.

7. The magnetic memory according to claim 1 , wherein the magnetization free layer has perpendicular magnetic anisotropy, and

wherein the magnetization free layer has a shape such that the first writing current is inhomogeneously-distributed in the magnetization free layer.

8. The magnetic memory according to claim 1 , wherein the magnetization free layer has perpendicular magnetic anisotropy, and

wherein the magnetization free layer has an region where inversion nucleation easily arises in a part of the magnetization free layer.

9. The magnetic memory according to claim 2 , wherein the first and second electrodes are asymmetric with respect to the magnetization free layer.

10. The magnetic memory according to claim 1 , wherein, in the magnetization free layer, a magnetization easy axis is pointed toward an intermediate between perpendicular and in-plane with respect to a film surface of the magnetization free layer.

11. The magnetic memory according to claim 10 , wherein the magnetization free layer is a lamination layer film in which a perpendicular anisotropy material film and an in-plane anisotropy material film are laminated.

12. The magnetic memory according to claim 1 , wherein the magnetization free layer is formed adjacent to the base layer.

13. The magnetic memory according to claim 1 , wherein the magnetization free layer is formed directly between the base layer and the barrier layer.

14. The magnetic memory according to claim 1 , wherein the magnetization free layer is formed directly on the base layer, the barrier layer is formed directly on the barrier layer.