Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
View Patent ↗The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body ( 1 ), which comprises an active zone ( 11 ) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body ( 1 ) through a radiation exit surface ( 1 a ), and—a second semiconductor body ( 2 ), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body ( 1 ) and the second semiconductor body ( 2 ) are produced separately from each other, —the second semiconductor body ( 2 ) is electrically inactive, and—the second semiconductor body ( 2 ) is in direct contact with the radiation exit surface ( 1 a ) and is attached there to the first semiconductor body ( 1 ) without connecting means.
1. A method for producing a light-emitting semiconductor component, comprising:
growing a first semiconductor body epitaxially on to a growth area of a growth carrier, said growth area being formed with silicon;
stripping the growth carrier away from the first semiconductor body by means of etching, the first semiconductor body having an outer area after completion of etching; and thereafter,
connecting the first semiconductor body at its outer area to a second semiconductor body, wherein said outer area of the first semiconductor body was abutting the said growth area of the growth carrier prior to the stripping of the growth carrier, and wherein said outer area of the first semiconductor body comprises a radiation exit area,
wherein the first semiconductor body comprises an active zone, in which electromagnetic radiation is generated during the operation of the light-emitting semiconductor component, said electromagnetic radiation leaving the first semiconductor body at least partly through the radiation exit area, and
wherein the second semiconductor body is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength.
2. The method according to claim 1 , wherein the growth area has a root-mean-square roughness value of at most 2 nm.
3. The method according to claim 1 , wherein the second semiconductor body is grown epitaxially on to another growth carrier, in particular by means of MBE, and is connected to the first semiconductor body by its outer area facing away from the other growth carrier.
4. The method according to claim 3 , wherein the second semiconductor body is grown epitaxially on to the other growth carrier, wherein the other growth carrier is formed with GaAs, Ge or InP.
5. The method according to claim 4 , wherein the other growth carrier for the second semiconductor body has a root-mean-square roughness value of at most 2 nm at its outer area facing the second semiconductor body,
wherein the other growth carrier is stripped away from the second semiconductor body after the second semiconductor body has been deposited, and
wherein the second semiconductor body is connected to the first semiconductor body by its outer area facing the other growth carrier.
6. The method according to claim 1 , wherein the first semiconductor body and the second semiconductor body are produced separately from one another,
wherein the second semiconductor body is electrically inactive, and
wherein the second semiconductor body is in direct contact with the radiation exit area and is fixed to the first semiconductor body there, in a manner free of connecting means.
7. The method according to claim 1 , wherein the radiation exit area and the outer area of the second semiconductor body facing the radiation exit area in each case have a root-mean-square roughness value of at most 2 nm.
8. The method according to claim 1 , wherein the first semiconductor body is based on a nitride compound semiconductor material.
9. The method according to claim 1 , wherein the second semiconductor body is based on a II-VI compound semiconductor material.
10. The method according to claim 9 , wherein the second semiconductor body is based on the material system ZnCdMg and at least one element from a group comprising: S, Se, Te, O.
11. The method according to claim 1 , wherein the second semiconductor body is based on a III-V compound semiconductor material.
12. The method according to claim 11 , wherein the second semiconductor body is based on the material system AlGaIn and at least one element from a group comprising N, As, P.
13. The method according to claim 1 , wherein the second semiconductor body has a thickness of at most 6 μm.
14. A method for producing a light-emitting semiconductor component, comprising:
growing a first semiconductor body epitaxially on to a growth area of a growth carrier, said growth area being formed with silicon;
stripping the growth carrier away from the first semiconductor body by means of etching; and thereafter,
connecting the first semiconductor body at its outer area to a second semiconductor body,
wherein the outer area of the first semiconductor body was abutting the growth area before the stripping away of the growth carrier,
wherein the outer area comprises a radiation exit area,
wherein the first semiconductor body comprises an active zone, in which electromagnetic radiation is generated during the operation of the light-emitting semiconductor component, said electromagnetic radiation leaving the first semiconductor body at least partly through the radiation exit area,
wherein the second semiconductor body is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, and
wherein the second semiconductor body acts as a converter on accounts of its natural band gap.
15. The method according to claim 14 , wherein the radiation exit area and the outer area of the second semiconductor body facing the radiation exit area in each case have a root-mean-square roughness value of at most 2 nm.