Nonvolatile memory element and method for manufacturing the same

1. A nonvolatile memory element comprising:

a first electrode;

a second electrode; and

a variable resistance layer which is positioned between the first electrode and the second electrode, the variable resistance layer having a resistance state which is configured to reversibly change based on an electrical signal applied between the first electrode and the second electrode,

wherein the variable resistance layer includes a first variable resistance layer comprising a first metal oxide and a second variable resistance layer comprising a second metal oxide, and the second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, the second metal oxide having a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide.

2. The nonvolatile memory element according to claim 1 ,

wherein in the variable resistance layer, the metal-metal bonding region is present at an interface between the second electrode and the second variable resistance layer.

3. The nonvolatile memory element according to claim 1 ,

wherein in the variable resistance layer, the metal-metal bonding region is present in the second variable resistance layer except on a surface of the second variable resistance layer.

4. The nonvolatile memory element according to claim 1 ,

wherein the metal-metal bonding region is present in the second variable resistance layer near an interface between the second variable resistance layer and the second electrode, and

the second variable resistance layer has a degree of oxygen deficiency which gradually increases toward the second electrode.

5. The nonvolatile memory element according to claim 1 ,

wherein each of the first metal oxide, the second metal oxide, and the metal-metal bonding region comprises a transition metal oxide or an aluminum oxide.

6. The nonvolatile memory element according to claim 1 ,

wherein the first metal oxide, the second metal oxide, and the metal-metal bonding region comprise a material including tantalum, hathium, or zirconium.

7. The nonvolatile memory element according to claim 1 ,

wherein the second variable resistance layer comprises an insulator.

8. A method for manufacturing a nonvolatile memory element, comprising:

forming a first electrode layer;

forming, on the first electrode layer, a first variable resistance layer comprising a first metal oxide;

forming, on the first variable resistance layer, a second variable resistance layer which comprises a second metal oxide having a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide;

forming, in the second variable resistance layer, a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide; and

forming a second electrode layer on the second variable resistance layer.

9. The method for manufacturing a nonvolatile memory element according to claim 8 ,

wherein in the forming of a metal-metal bonding region, oxygen is desorbed from the second variable resistance layer to form the metal-metal bonding region.

10. The method for manufacturing a nonvolatile memory element according to claim 9 ,

wherein in the forming of a second electrode layer, the second electrode layer is formed by sputtering, and

in the forming of a metal-metal bonding region, sputtering is performed using, as a target, a second electrode material included in the second electrode layer, with a film formation pressure lower than a film formation pressure for forming the second electrode layer.

11. The method for manufacturing a nonvolatile memory element according to claim 8 ,

wherein the forming of a second variable resistance layer includes (i) stacking the second metal oxide after the forming of a first variable resistance layer and (ii) stacking the second metal oxide after the forming of a metal-metal bonding region.