Laser light source

1. A laser light source having a ridge waveguide structure, the laser light source comprising:

a semiconductor layer sequence having a plurality of functional layers and an active region configured to generate laser light during operation;

wherein at least one of the functional layers is embodied as a ridge of the ridge waveguide structure; and

wherein the semiconductor layer sequence has a mode filter structure, which is at least one of embodied as part of the ridge, disposed along a main extension plane of the functional layers alongside the ridge, or perpendicular to a main extension plane of the functional layers below the ridge; and

wherein the ridge adjoins a functional layer of the semiconductor layer sequence which has, as the mode filter structure, at least one of a conductivity-changing, or light-absorbing material.

2. The laser light source according to claim 1 , wherein the ridge has, as the mode filter structure, a varying ridge height perpendicular to the main extension plane of the functional layers.

3. The laser light source according to claim 2 , wherein the ridge height varies along a ridge extension direction.

4. The laser light source according to claim 2 , wherein the ridge is delimited by two ridge side faces running along the ridge extension direction and the ridge side faces have at least partly different ridge heights.

5. The laser light source according to claim 1 , further comprising a passivation arranged alongside the ridge as the mode filter structure, the passivation varying along a ridge extension direction.

6. The laser light source according to claim 5 , wherein the ridge is delimited by two ridge side faces running along the ridge extension direction and different passivations are arranged alongside the ridge as the mode filter structure at the two ridge side faces.

7. The laser light source according to claim 1 , wherein the ridge is delimited by two ridge side faces running along the ridge extension direction and has, as the mode filter structure, an oxidation of at least one partial region of a ridge side face.

8. The laser light source according to claim 7 , wherein the ridge has an aluminum-containing functional layer, which is oxidized at at least one side face.

9. The laser light source according to claim 1 , wherein the semiconductor layer sequence has at least one functional layer as the mode filter structure, which has at least partly a damaged structure that is disposed alongside the ridge, below the ridge, or both alongside and below the ridge.

10. The laser light source according to claim 1 , wherein the ridge has, as the mode filter structure, at least one of a varying horizontal ridge width that is parallel to the main extension plane of the functional layers and perpendicular to a ridge extension direction or a varying vertical ridge width that is perpendicular to the main extension plane of the functional layers and perpendicular to the ridge extension direction.

11. The laser light source according to claim 10 , wherein the horizontal ridge width has at least one thickening or constriction.

12. The laser light source according to claim 10 , wherein the vertical ridge width has a constriction of the active region.

13. The laser light source according to claim 1 , wherein the mode filter structure has, alongside the ridge, at least one stray light filter structure having a depression in the semiconductor layer sequence.

14. The laser light source according to claim 1 , wherein the ridge has, as the mode filter structure, a curved ridge extension direction.

15. A laser light source having a ridge waveguide structure, the laser light source comprising:

a semiconductor layer sequence having a plurality of functional layers and an active region configured to generate laser light during operation;

wherein at least one of the functional layers is embodied as a ridge of the ridge waveguide structure;

wherein the semiconductor layer sequence has a mode filter structure, which is at least one of embodied as part of the ridge, disposed along a main extension plane of the functional layers alongside the ridge, or perpendicular to a main extension plane of the functional layers below the ridge;

wherein the ridge has, as the mode filter structure, a vertical ridge width that varies along a direction that is perpendicular to the main extension plane of the functional layers and that is further perpendicular to a ridge extension direction;

wherein the vertical ridge width has a constriction such that a first portion of the ridge has a first vertical ridge width and a second portion of ridge that is aligned directly over the first portion and that has a second vertical ridge width that is wider than the first vertical ridge width;

wherein the first portion of the ridge is between the active region and the second portion of the ridge.

16. The laser light source according to claim 15 , wherein the vertical ridge width has a constriction of the active region.

17. A laser light source having a ridge waveguide structure, the laser light source comprising:

a semiconductor layer sequence having a plurality of functional layers and an active region configured to generate laser light during operation;

wherein at least one of the functional layers is embodied as a ridge of the ridge waveguide structure;

wherein the semiconductor layer sequence has a mode filter structure, which is at least one of embodied as part of the ridge, disposed along a main extension plane of the functional layers alongside the ridge, or perpendicular to a main extension plane of the functional layers below the ridge;

wherein a passivation is arranged alongside the ridge as the mode filter structure, the passivation having a first passivation region and a second passivation region that is adjacent to the first passivation region in a ridge extension direction;

wherein the ridge is delimited by two ridge side faces running along the ridge extension direction and the first and second passivation regions are arranged alongside the ridge as the mode filter structure at each of the two ridge side faces;

wherein the first passivation region has at least one of a different height or a different composition than the second passivation region; and

wherein there is an abrupt or a continuous transition between the first and second passivation regions at each of the two ridge side faces.

18. A laser light source having a ridge waveguide structure, the laser light source comprising:

a semiconductor layer sequence having a plurality of functional layers and an active region configured to generate laser light during operation;

wherein at least one of the functional layers is embodied as a ridge of the ridge waveguide structure;

wherein the semiconductor layer sequence has a mode filter structure, which is at least one of embodied as part of the ridge, disposed along a main extension plane of the functional layers alongside the ridge, or perpendicular to a main extension plane of the functional layers below the ridge;

wherein the ridge has, as part of the mode filter structure, a curved ridge extension direction; and

wherein the mode filter structure has, alongside the ridge, at least one stray light filter structure having a depression in the semiconductor layer sequence.

19. The laser light source according to claim 18 , wherein the ridge extension direction has a continuous direction change.

20. A laser light source having a ridge waveguide structure, the laser light source comprising:

a semiconductor layer sequence having a plurality of functional layers and an active region configured to generate laser light during operation;

wherein at least a first one of the functional layers is embodied as a ridge of the ridge waveguide structure; and

wherein the semiconductor layer sequence has at least a second one the functional layers as a mode filter structure;

wherein the mode filter structure is at least one of embodied as part of the ridge, disposed along a main extension plane of the functional layers alongside the ridge, or perpendicular to a main extension plane of the functional layers below the ridge; and

wherein the mode filter structure comprises at least one of a conductivity-changing or light-absorbing material;

wherein the mode filter structure has at least partly a damaged structure that is disposed alongside the ridge, below the ridge, or both alongside and below the ridge; and

wherein an undamaged portion of the semiconductor layer sequence is disposed directly over the damaged structure.