Flared laser oscillator waveguide

1. A broad area semiconductor diode laser device comprising:

a multimode high reflector facet;

a partial reflector facet spaced from said multimode high reflector facet; and

a flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1;

wherein said flared current injection region propagates light such that a beam output at said partial reflector facet has a narrower beam width than said partial reflector facet width and a corresponding narrower slow-axis divergence;

wherein said narrower beam width and narrower slow-axis divergence in conjunction with an enlarged total pumped area provided b the flaring of said flared current injection region are operable to reduce thermal resistance and electrical series resistance and result in increased beam brightness and lower beam parameter product of said beam output for a selected device output power.

2. The device of claim 1 wherein said high reflector facet has a width selected in the range of about 10 μm to 200 μm.

3. The device of claim 1 wherein said flared current injection region flares with a constant change in width with respect to length.

4. The device of claim 1 wherein said flared current injection region flares with a variable change in width with respect to length.

5. The device of claim 1 wherein said flared current injection region is gain guided.

6. The device of claim 1 wherein said flared current injection region is index guided.

7. The device of claim 1 wherein said ratio of facet widths is optimized for brightness over a selected current range.

8. The device of claim 1 further comprising a distributed feedback grating disposed in said flared current injected region and extending between said facets, said distributed feedback grating providing wavelength stabilization to the device.

9. The device of claim 1 further comprising a distributed Bragg reflector grating positioned at said high reflector facet, said distributed Bragg reflector providing wavelength stabilization to the device.

10. The device of claim 1 wherein a beam is emitted substantially in the fundamental mode across a fast axis thereof.

11. The device of claim 1 wherein said multimode high reflector facet has a reflectivity of about 90% or greater.

12. The device of claim 1 wherein said partial reflecting facet has a reflectivity of about 0.05% or greater.

13. The apparatus of claim 1 wherein the beam width full-width 1/e 2 at the partial reflector facet is less than about 95 % of the partial reflector facet width.

14. The apparatus of claim 1 wherein the slow axis divergence of the beam associated with the flared current injection region is lower than the slow axis divergence of a beam emitted from a broad area laser having a rectangular pumped area with high and partial reflector facet widths corresponding to the partial reflector facet width associated with the flared current injection region.

15. The apparatus of claim 1 wherein the total pumped area of the flared current injection region is enlarged as compared to a broad area laser having a rectangular pumped area with high and partial reflector facet widths corresponding to the high reflector facet width associated with the flared current injection region.

16. The apparatus of claim 1 wherein the thermal resistance and electrical series resistance associated with the flared current injection region is lower than the thermal resistance and electrical series resistance of a broad area laser having a rectangular pumped area with high and partial reflector facet widths corresponding to the high reflector facet width associated with the flared current injection region.

17. The apparatus of claim 1 wherein the brightness associated with the beam emitted from the partial reflector facet is larger than the brightness of a beam emitted from a broad area laser having a rectangular pumped area and high and partial reflector facet widths corresponding to the partial reflector facet width associated with the flared current injection region.

18. The apparatus of claim 1 wherein the beam parameter product associated with the beam emitted from the partial reflector facet is smaller than the beam parameter product of a beam emitted from a broad area laser having rectangular pumped area and high and partial reflector facet widths corresponding to the partial reflector facet width associated with the flared current injection region.

19. The apparatus of claim 1 wherein the device output power is selected to be in the range of 10 to 15 W.

20. A broad area semiconductor diode laser device comprising:

a multimode high reflector facet;

a partial reflector facet s aced from said multimode high reflector facet; and

a flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1;

wherein said flared current injection region flares with a plurality of flare regions.

21. A broad area semiconductor diode laser device comprising:

a multimode high reflector facet;

a partial reflector facet spaced from said multimode high reflector facet; and

a flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1;

wherein said current injection region includes a rectangular end portion positioned at said multimode high reflector facet such that a cleaved end is formed so as to provide a predictable width for said multimode high reflector facet.

22. A broad area semiconductor diode laser device comprising:

a multimode high reflector facet;

a partial reflector facet spaced from said multimode high reflector facet; and

a flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1;

wherein said current injection region includes a rectangular end portion positioned at said multimode partial reflector facet such that a cleaved end is formed so as to provide a predictable width for said multimode partial reflector facet.

23. A broad area semiconductor diode laser device comprising:

a multimode high reflector facet;

a partial reflector facet spaced from said multimode high reflector facet;

a flared current injection region extending and widening between said multimode high reflector facet and said partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1; and

a pair of scattering elements disposed along opposing lateral sides of said flared current injection region, said scattering elements operable to scatter higher order modes of light propagating therein.