Manufacturing method for semiconductor device, annealing device, and annealing method

1. A method of re-crystallizing an amorphous semiconductor layer into a single crystal after exposure of the amorphous semiconductor layer to ions used in ion implantation, comprising:

re-crystallizing the implanted amorphous semiconductor layer into a single crystal semiconductor layer by heat treating the amorphous semiconductor layer, using microwaves, to a first temperature that is greater than or equal to 200° C. and less than or equal to 700° C.; and then

heat treating the single crystal semiconductor layer ,using energy other than microwaves, to a second temperature that is greater than the first temperature.

2. The method of claim 1 , wherein the implanted amorphous semiconductor layer has a feature having a width L and a height H, and the relationship L/H<4 is satisfied.

3. The method of claim 2 , wherein the first temperature is between 200° C. and 600° C.

4. The method of claim 1 , wherein the implanted amorphous semiconductor layer comprises amorphous silicon within a semiconductor substrate.

5. The method of claim 1 , wherein the implanted amorphous semiconductor layer comprises silicon extending from a semiconductor substrate.

6. The method of claim 5 , further comprising:

implanting ions into the single crystal semiconductor layer after recrystallizing the implanted amorphous semiconductor layer using microwaves.

7. The method of claim 1 , wherein the implanted amorphous semiconductor layer is supported on a support having a ferromagnetic material therein and having a Curie temperature between 200° C. and 700° C.

8. A manufacturing method for a semiconductor device, the method comprising:

performing ion implantation on a semiconductor layer and forming an amorphous layer on a surface of the semiconductor layer;

a first heat treatment step, using microwave annealing, where the amorphous layer is heated to a first temperature that is greater than or equal to 200° C. and less than or equal to 700° C., and the amorphous layer is re-crystallized into a single crystal; and

a second heat treatment step after the microwave annealing, using energy other than microwaves, where the single crystal is heated to a second temperature that is greater than the first temperature, wherein a width of the amorphous layer is L and a height of the amorphous layer is H, the relationship L/H<4 is satisfied.

9. The manufacturing method for a semiconductor device according to claim 8 , wherein the second heat treatment step recovers crystal defects at an interface between the semiconductor layer and the amorphous layer.

10. The manufacturing method for a semiconductor device according to claim 8 , wherein

the first temperature is greater than or equal to 200° C. and less than or equal to 600° C.

11. The manufacturing method for a semiconductor device according to claim 10 , wherein

the second heat treatment step is performed with any one of RTA, FLA, and LSA.

12. The manufacturing method for a semiconductor device according to claim 10 , further comprising:

performing an ion implantation on the semiconductor layer between the first heat treatment step and the second heat treatment step.

13. The manufacturing method for a semiconductor device according to claim 8 , wherein

the ion implantation is performed using a plasma treatment.

14. A manufacturing method for a semiconductor device, the method comprising:

implanting ions on a semiconductor layer and forming an amorphous layer on a surface of the semiconductor layer;

annealing the amorphous layer in a first heat treatment using microwave energy, wherein the amorphous layer is heated to a first temperature that is greater than or equal to 200° C. and less than or equal to 700° C., and is re-crystallized into a single crystal; and

heating the single crystal, in a second heat treatment, to a second temperature that is greater than the first temperature after the first heat treatment, using energy other than microwaves.

15. The manufacturing method for a semiconductor device according to claim 14 , further comprising:

recovering crystal defects at an interface between the semiconductor layer and the amorphous layer.

16. The manufacturing method for a semiconductor device according to claim 14 , wherein

the second heat treatment step is performed with any one of rapid thermal annealing, flash lamp annealing, and laser spike annealing.

17. The manufacturing method for a semiconductor device according to claim 14 , further comprising:

implanting ions on a semiconductor layer on the semiconductor layer between the first heat treatment step and the second heat treatment step.

18. The manufacturing method for a semiconductor device according to claim 14 , wherein

the ion implantation is performed using a plasma treatment.