IP Library Patent Application 14016581
Patent Application
App. No. 14/016,581

RELEASE FILM AND PROCESS FOR PRODUCING LIGHT EMITTING DIODE

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Quick Facts
Patent No.
US None
App. No.
14/016,581
Abstract

Provided is a release film for producing a light emitting diode having desired concaves and convexes accurately transferred directly to the surface of a resin-sealed portion, at a low cost and in high yield, and a process for producing a light emitting diode. A release film 10 having a plurality of convex portions (convex stripes 12 ) and/or concave portions (grooves 14 ) formed on the surface is used as a release film to be placed in a cavity of a mold for forming a resin-sealed portion to seal a light emitting element of a light emitting diode.

Claims (29)

1 - 7 . (canceled)

8 . A process for sealing a light emitting element, which is a process for sealing a light emitting element of a light emitting diode with a transparent resin by means of a mold, which comprises:

placing a release film having a plurality of convex portions and/or concave portions formed on at least one surface of said release film in a cavity of a mold so as to cover the inner surface of the cavity of the mold and so that the surface having the convex portions and/or concave portions formed thereon faces a space in the cavity, then

placing the light emitting element in the cavity, and then

filling the cavity with a transparent resin to seal the light emitting element with the transparent resin.

9 . The process for sealing a light emitting element according to claim 8 , wherein the release film is made of a fluororesin.

10 . A process for producing a light emitting diode which comprises sealing a light emitting element with a transparent resin by means of a mold to form a resin-sealed portion, wherein a release film is preliminarily placed in a cavity of the mold, before sealing the light emitting element, and wherein a plurality of convex portions and/or concave portions are formed on at least one surface of the release film.

11 . A process for producing a light emitting diode, which comprises:

placing a release film having a plurality of convex portions and/or concave portions formed on its surface so as to cover the inner surface of a cavity of a mold and so that the convex portions and/or concave portions formed on the surface face a space in the cavity,

placing a substrate having a light emitting element connected thereto in the mold so that the light emitting element is positioned at a prescribed position in the cavity of the mold,

filling the space in the cavity with a resin to form a resin-sealed portion,

taking out the light emitting diode from the mold in such a state that the release film is attached to the resin-sealed portion, and

peeling the release film from the resin-sealed portion.

12 . The process for sealing a light emitting element according to claim 9 , wherein the fluororesin is an ethylene/tetrafluoroethylene copolymer.

13 . The process for sealing a light emitting element according to claim 8 , wherein the convex portions and/or concave portions have inclined surfaces with an inclination angle of from 20 to 75°.

14 . The process for sealing a light emitting element according to claim 8 , wherein an average interval of adjacent local peaks of the convex portions or an average interval of adjacent local bottoms of the concave portions is from 4 to 200 μm, and an average height of the convex portions or an average depth of the concave portions is from 2 to 100 μm.

15 . The process for sealing a light emitting element according to claim 8 , wherein the convex portions are convex stripes with a triangular cross section, and the concave portions are grooves with a V-form cross section.

16 . The process for sealing a light emitting element according to claim 8 , wherein the convex portions are pyramid projections, and the concave portions are pyramid gaps.

17 . The process for sealing a light emitting element according to claim 8 , wherein the thickness of the release film is at most 150 μm.

18 . The process for producing a light emitting diode according to claim 10 , wherein the convex portions and/or concave portions have inclined surfaces with an inclination angle of from 20 to 75°.

19 . The process for producing a light emitting diode according to claim 10 , wherein an average interval of adjacent local peaks of the convex portions or an average interval of adjacent local bottoms of the concave portions is from 4 to 200 μm, and an average height of the convex portions or an average depth of the concave portions is from 2 to 100 μm.

20 . The process for producing a light emitting diode according to claim 10 , wherein the convex portions are convex stripes with a triangular cross section, and the concave portions are grooves with a V-form cross section.

21 . The process for producing a light emitting diode according to claim 10 , wherein the convex portions are pyramid projections, and the concave portions are pyramid gaps.

22 . The process for producing a light emitting diode according to claim 10 , wherein the thickness of the release film is at most 150 μm.

23 . The process for producing a light emitting diode according to claim 11 , wherein the convex portions and/or concave portions have inclined surfaces with an inclination angle of from 20 to 75°.

24 . The process for producing a light emitting diode according to claim 11 , wherein an average interval of adjacent local peaks of the convex portions or an average interval of adjacent local bottoms of the concave portions is from 4 to 200 μm, and an average height of the convex portions or an average depth of the concave portions is from 2 to 100 μm.

25 . The process for producing a light emitting diode according to claim 11 , wherein the convex portions are convex stripes with a triangular cross section, and the concave portions are grooves with a V-form cross section.

26 . The process for producing a light emitting diode according to claim 11 , wherein the convex portions are pyramid projections, and the concave portions are pyramid gaps.

27 . The process for producing a light emitting diode according to claim 11 , wherein the thickness of the release film is at most 150 μm.

Assignments (1)
CHANGE OF NAME Recorded Aug 7, 2018
From: ASAHI GLASS COMPANY, LIMITED
To: AGC INC.
Reel/Frame 046730/0786 →