Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
View Patent ↗According to one embodiment, a manufacturing method of a semiconductor device includes forming a crystal film on a semiconductor substrate by irradiating the semiconductor substrate with a first microwave, obtained by providing frequency modulation or phase modulation of a first carrier wave which is a sine wave with a first frequency, using a first signal wave which is a sine wave or a pulse wave with a third frequency lower than a first frequency, and irradiating the semiconductor substrate with a second microwave, obtained by providing frequency modulation or phase modulation of a second carrier wave, which is a sine wave with a second frequency higher than the first frequency, using a second signal wave which is a sine wave or a pulse wave with a fourth frequency lower than the second frequency.
1. A manufacturing method of a semiconductor device, comprising:
forming a crystal film on a semiconductor substrate by irradiating a first microwave energy at a first frequency and a second microwave energy at a second frequency higher than the first frequency, wherein the first microwave energy includes a first carrier wave that is frequency modulated or phase modulated.
2. The manufacturing method according to claim 1 , wherein
the semiconductor substrate is cooled during irradiation of the first microwave.
3. The manufacturing method according to claim 1 , wherein
the semiconductor substrate is rotated during irradiation of the first microwave.
4. The manufacturing method according to claim 1 , wherein
the semiconductor substrate is rotated during irradiation of the second microwave.
5. The manufacturing method according to claim 1 , wherein
the first carrier wave is a sine wave having the first frequency.
6. The manufacturing method according to claim 5 , wherein
the second microwave energy includes a second carrier wave that is frequency modulated or phase modulated.
7. The manufacturing method according to claim 5 , wherein
the first carrier wave is frequency modulated or phase modulated using a first signal wave which is a sine wave or a pulse wave with a third frequency lower than the first frequency.
8. The manufacturing method according to claim 7 , wherein
the second carrier wave is a sine wave having a second frequency greater than the first frequency.
9. The manufacturing method according to claim 8 , wherein
the second carrier wave is frequency modulated or phase modulated using a second signal wave which is a sine wave or a pulse wave with a fourth frequency lower than the second frequency.
10. The manufacturing method according to claim 1 , wherein
the first microwave energy is obtained by providing frequency modulation or phase modulation of the first carrier wave which is a sine wave with the first frequency, using a first signal wave which is a sine wave or a pulse wave with a third frequency lower than the first frequency; and
the second microwave is obtained by providing frequency modulation or phase modulation of a second carrier wave which is a sine wave with the second frequency greater than the first frequency, using a second signal wave which is a sine wave or a pulse wave with a fourth frequency lower than the second frequency.
11. The manufacturing method according to claim 1 , wherein
the semiconductor device comprises a silicon substrate having a doped layer.
12. A manufacturing method of a semiconductor device, comprising:
forming a crystal film on a semiconductor substrate by
irradiating the semiconductor substrate with a first microwave energy, obtained by providing frequency modulation or phase modulation of a first carrier wave which is a sine wave with a first frequency, using a first signal wave which is a sine wave or a pulse wave with a third frequency lower than the first frequency; and
irradiating the semiconductor substrate with a second microwave, obtained by providing frequency modulation or phase modulation of a second carrier wave which is a sine wave with a second frequency greater than the first frequency, using a second signal wave which is a sine wave or a pulse wave with a fourth frequency lower than the second frequency.
13. The manufacturing method according to claim 12 , wherein
the semiconductor substrate is cooled during irradiation of the first microwave.
14. The manufacturing method according to claim 12 , wherein
the semiconductor substrate is rotated during irradiation of the first microwave.
15. The manufacturing method according to claim 12 , wherein
the semiconductor substrate is rotated during irradiation of the second microwave.
16. A semiconductor manufacturing apparatus, comprising:
a film formation chamber;
a first waveguide which provides a first microwave energy at a first frequency into the film formation chamber;
a second waveguide which provides a second microwave energy with a second frequency greater than the first frequency into the film formation chamber; and
a microwave modulation device to provide frequency modulation or phase modulation of the first microwave energy or the second microwave energy.
17. The semiconductor manufacturing apparatus according to claim 16 , further comprising:
a cooling device for cooling the semiconductor substrate.
18. The semiconductor manufacturing apparatus according to claim 16 , further comprising:
a cooling device for cooling the semiconductor substrate.