DIAMOND PARTICLE MOLOLAYER HEAT SPREADERS AND ASSOCIATED METHODS
Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.
1 . A method for reducing thermally induced defects between a heat spreader and a semiconductor device, comprising:
disposing a monolayer of diamond particles within a thin metal heat spreader; and
thermally coupling the heat spreader to a semiconductor material, wherein the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.
2 . The method of claim 1 , wherein the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 5.0 ppm/° C.
3 . The method of claim 1 , wherein thermally coupling the heat spreader to the semiconductor material is by soldering.
4 . The method of claim 1 , wherein disposing the monolayer of diamond particles within the thin metal heat spreader further comprises:
applying the monolayer of diamond particles on a first metal layer;
disposing a second metal layer on the first metal layer such that the monolayer of diamond particles is sandwiched therebetween; and
pressing the first and second metal layers together with sufficient heat and pressure to fix the diamond particles within the layers.
5 . The method of claim 4 , wherein the heat is from about 700° C. to about 1000° C. and the pressure is from about 10 MPa to about 50 MPa.
6 . The method of claim 1 , wherein disposing the monolayer of diamond particles within the thin metal heat spreader further comprises:
disposing the monolayer of diamond particles within a metal powder; and
sintering the metal powder with sufficient heat and pressure to fix the diamond particles within the sintered metal.
7 . The method of claim 1 , wherein disposing the monolayer of diamond particles within the thin metal heat spreader further comprises:
applying the monolayer of diamond particles on a metal substrate;
disposing the metal substrate into an ionic solution containing metal ions; and
introducing an electrical current into the ionic solution such that a metal layer is electroplated onto the metal substrate to secure the diamond particles.
8 . The method of claim 1 , wherein the heat spreader is from about 50 microns thick to about 300 microns thick.
9 . The method of claim 1 , wherein the thin metal heat spreader includes a member selected from the group consisting of aluminum, copper, gold, silver, platinum, and alloys thereof.
10 . The method of claim 1 , wherein the semiconductor material includes a member selected from the group consisting of silicon, silicon carbide, silicon germanium, gallium arsenide, gallium nitride, germanium, zinc sulfide, gallium phosphide, gallium antimonide, gallium indium arsenide phosphide, aluminum phosphide, aluminum arsenide, aluminum gallium arsenide, gallium nitride, boron nitride, aluminum nitride, indium arsenide, indium phosphide, indium antimonide, indium nitride, and composites thereof.
11 . The method of claim 1 , wherein the semiconductor material includes a member selected from the group consisting of gallium nitride, aluminum nitride, and composites thereof.
12 - 19 . (canceled)