Photon detector configured to employ the Gunn effect and method of use
View Patent ↗Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 μm to about 400 μm and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10 10 cm −3 .
1. A photon detector for detecting high-energy photons, the photon detector comprising:
a p-i-n semiconductor diode including:
a p-type semiconductor region;
an n-type semiconductor region; and
a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region;
wherein the compensated i-region has a width of about 100 μm to about 400 μm;
wherein the compensated i-region is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount; and
wherein the compensated i-region is doped to include a free carrier concentration of less than about 10 10 cm −3 .
2. The photon detector of claim 1 wherein the free carrier concentration of the compensated i-region is less than about 10 8 cm −3 .
3. The photon detector of claim 1 wherein the width of the compensated i-region is about 100 μm to about 300 μm.
4. The photon detector of claim 1 wherein the width of the compensated i-region is about 250 μm to about 350 μm.
5. The photon detector of claim 1 wherein a drift region is formed in the p-i-n semiconductor diode when the p-i-n semiconductor diode is forward biased that has a width of about 150 μm to about 300 μm.
6. The photon detector of claim 1 wherein the p-type semiconductor region and the n-type semiconductor region are laterally adjacent to the compensated i-region.
7. The photon detector of claim 1 wherein the compensated i-region is sandwiched between the p-type semiconductor region and the n-type semiconductor region.
8. The photon detector of claim 1 , further comprising:
a voltage source; and
a controller operably coupled to the voltage source and configured to direct the voltage source to apply a forward bias to the p-i-n semiconductor diode such that the compensated i-region exhibits the Gunn effect while subjected to the forward bias.
9. The photon detector of claim 1 , further comprising:
a voltage source; and
a controller operably coupled to the voltage source and programmed to direct the voltage source to apply a forward bias to the p-i-n semiconductor diode such that the compensated i-region exhibits the Gunn effect while subjected to the forward bias.
10. The photon detector of claim 1 wherein each of the p-type semiconductor region, the n-type semiconductor region, and the compensated i-region includes a III-V semiconductor compound.
11. The photon detector of claim 10 wherein the III-V semiconductor compound includes gallium arsenide.
12. The photon detector of claim 1 :
wherein each of the p-type semiconductor region, the n-type semiconductor region, and the compensated i-region includes gallium arsenide;
wherein the free carrier concentration of the compensated i-region is less than about 10 7 cm −3 ; and
wherein the p-i-n semiconductor diode exhibits a drift region having a width of about 150 μm to about 300 μm when the p-i-n semiconductor diode is forward biased.
13. The method of claim 12 wherein the high-energy photons includes at least one of x-rays or gamma rays.
14. The method of claim 12 wherein the drift region has a width of about 150 μm to about 300 μm when being forward biased.
15. The method of claim 12 wherein the p-i-n semiconductor diode includes a compensated i-region having a free carrier concentration of less than about 10 7 cm −3 .
16. The method of claim 12 wherein the p-i-n semiconductor diode includes a III-V semiconductor compound.
17. The method of claim 16 wherein the III-V semiconductor compound includes gallium arsenide.
18. A method for detecting high-energy photons, the method comprising:
forward biasing a p-i-n semiconductor diode of a photon detector such that a compensated i-region of the p-i-n semiconductor diode exhibits the Gunn effect while being forward biased;
while the p-i-n semiconductor diode is forward biased, receiving the high-energy photons at a drift region of the p-i-n semiconductor diode of the photon detector to generate a photoresponse in the photon detector; and
determining the presence of the high-energy photons at least partially based on the photoresponse of the photon detector.
19. A photon detector for detecting high-energy photons, the photon detector comprising a p-i-n semiconductor diode, a voltage source, and a controller, wherein:
the p-i-n semiconductor diode includes a p-type semiconductor region, an n-type semiconductor region, and a compensated i-semiconductor region disposed between the p-type semiconductor region and the n-type semiconductor region;
the controller is operably coupled to the voltage source and configured to direct the voltage source to apply a forward bias to the p-i-n semiconductor diode; and
the compensated i-semiconductor region exhibits the Gunn effect while subjected to the forward bias.